Open Standards for Automation of Testing of Photonic Integrated Circuits

Latkowski, Sylwester; Pustakhod, Dzmitry; Chatzimichailidis, Michail; Yao, Weiming; Leijtens, X.J.M.

doi:10.1109/jstqe.2019.2921401

Cited by 15 publications

(10 citation statements)

References 23 publications

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“…While the aim perfectly matches the use-case defined in this paper, the current state of this format is still in draft focusing on chip-level first. Therefore, we omitted the format in the evaluation as it is not finished [22].…”

Section: Resultsmentioning

confidence: 99%

Evaluation of Industry 4.0 Data formats for Digital Twin of Optical Components

Schmetz

Lee

Hoeren

et al. 2020

Int. J. of Precis. Eng. and Manuf.-Green Tech.

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A wide range of software and hardware components are present in today's production systems and plants using a variety of interfaces and data formats for information exchange on different levels of the system. To increase the traceability, the lifecycle management and providing a single point of source of component-specific data, the Digital Twin technology is proposed, linking different data sets tailored to the requirements of different kind of users (e.g., machines, technicians, logistics, manufacturing execution systems). The data exchange between entities in the manufacturing network relies on machine-readable, flexible and self-describing data formats. When implementing or integrating different components into complex systems, the interoperability challenge is a major concern to address by the system designers and becomes a central task for the creation and integration of Digital Twin technology. In this paper, we evaluate different formats that are used in real environments and create a requirements framework for an ideal format for exchanging flexible and self-describing data in context of optical components manufacturing process and their special requirements.

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Section: Resultsmentioning

confidence: 99%

Evaluation of Industry 4.0 Data formats for Digital Twin of Optical Components

Schmetz

Lee

Hoeren

et al. 2020

Int. J. of Precis. Eng. and Manuf.-Green Tech.

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“…The amplified spontaneous emission (ASE) spectra are detected using an optical spectrum analyzer connected to a lensed single mode output fiber. Automated alignment routines are performed to optimize the chip to fiber coupling as described in [37]. Multiple spectra from different amplifier lengths between 50 and 600 µm are measured.…”

Section: A Unsaturated Modal Gainmentioning

confidence: 99%

“…10. When the first section optical amplifier is driven with forward bias and no light is injected from an external source, it is possible to perform automated alignment through the maximization of the power reading from an external detector (Agilent81636B) [37] and read the current dependent ASE from an optical spectrum analyzer (OSA) (ANDO AQ6315A). When we inject an on/off modulated (300kHz) TE polarized light from a tunable laser source (Santec TSL-520) into the amplifier, the second amplifier section is used as a detector.…”

Section: Optical Gain Saturationmentioning

confidence: 99%

1300 nm Semiconductor Optical Amplifier Compatible With an InP Monolithic Active/Passive Integration Technology

Hazan

Andreou²,

Pustakhod

et al. 2022

IEEE Photonics J.

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In monolithic photonic integrated circuits (PICs), an optimized active/passive integration is needed to provide efficient coupling and low amount of interface reflections between amplifiers and passive components. A 1300 nm semiconductor optical amplifier (SOA) on InP substrate and optimized for butt-joint reflections is investigated. Material performance were assessed from measurements of broad area lasers. Room temperature operation reveals 1.2 W single facet output power with threshold current around 100 A/cm 2 per well. Characteristic temperatures of T0=75 K and T1=294 K were obtained. A compact model description of the SOA, suitable for the design of PICs and rate equation analysis, was applied to parametrize the unsaturated gain measurements. Current injection efficiency of 0.65, transparency carrier density of 0.57 10 18 cm -3 , and free carrier absorption losses up to 15 cm -1 were extracted from fitting the data. The model is verified with measurements of optical gain saturation. A modal gain of 15 dB for a 600 µm long narrow ridge SOA leads to output saturation power higher than 30 mW at 7 kA/cm 2 . This building block contributes to the development of an InP monolithic integration technology in the 1300 nm range, which can enable the use of photonic integrated circuits in many kind of applications.

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“…4(b) shows a microscope image of the transmitter, fabricated in the generic InP multi-project-wafer platform of Smart Photonics [13,14]. The fabricated transmitter was then packaged by Cordon Electronics in a gold-box package [15]. The packaging of a single chip with optical access and electrical connections was required.…”

Section: Inp Integrated Qkd Transmittermentioning

confidence: 99%

On-Chip Quantum Communication Devices

Trenti

Achleitner

Prawits

et al. 2022

J. Lightwave Technol.

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We present here results of the Quantum Technology Flagship project UNIQORN in the area of integrated photonics for quantum communication applications. Three distinct integration platforms, namely indium phosphide based monolithic integration, polymer-based hybrid integration and the CMOScompatible silicon platform, have been employed to manufacture components and sub-systems on chip for quantum communication devices. The choice of different platforms was made to exploit the best characteristics of each platform for the intended quantum communication device. The indium phosphide platform was employed to manufacture a transmitter chip for quantum key distribution featuring laser, modulators, and attenuators. The transmitter chip was evaluated in a QKD experiment achieving a secure rate of 1 kbit/s. The polymer platform was investigated for engineering non-classical light sources. Entangled and heralded single-photon sources, based on non-linear optics, were assembled on the polymer in a hybrid fashion together with waveguides and other passive micro-optical elements. A quantum random number generator, featuring a 70% randomness extraction efficiency, was also fabricated using the polymer integration technique. An array of 32 individual single-photon avalanche diodes, operating at room temperature and featuring an onboard coincidence logic, was coupled to the chip to demonstrate direct detection of photons on the polymer. Finally, a transimpedance amplifier based on gallium arsenide high electron mobility transistors was produced with an exceptional large electrical noise clearance of 28 dB at 100 MHz.

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Open Standards for Automation of Testing of Photonic Integrated Circuits

Cited by 15 publications

References 23 publications

Evaluation of Industry 4.0 Data formats for Digital Twin of Optical Components

Evaluation of Industry 4.0 Data formats for Digital Twin of Optical Components

1300 nm Semiconductor Optical Amplifier Compatible With an InP Monolithic Active/Passive Integration Technology

On-Chip Quantum Communication Devices

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