2013
DOI: 10.1002/adfm.201301048
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Open‐Circuit Voltage and Effective Gap of Organic Solar Cells

Abstract: eff. Furthermore, the infl uence of the hole transport material in a p-doped hole transport layer and the donor-acceptor mixing ratio on this limit V 0 is found to be negligible. Varying the active material system, the quantitative relation between V 0 and E g eff is found to be identity. A comparison of V 0 in a series of nine different donor-acceptor material combinations opens a pathway to quantitatively determine the ionization potential of a donor material or the electron affi nity of an acceptor material. Show more

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Cited by 85 publications
(115 citation statements)
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“…4.9b also displays photovoltaic gaps Γ as the sum of the mean donor IE and acceptor EA: Since the chemical potentials for holes and electrons, µ e and µ h , lie fairly deep in the respective DOS, the difference Γ − V oc amounts to around 0.6 eV for the mildly disordered systems (P3HT, sexithiophene, pentacene), but grows considerably with energetic disorder, reaching 0.9 eV for D5M/C 60 . This finding is supported by a number of studies [152,157,158] where energetic disorder has been hypothesized as a contribution to the observed gap: Experimentally, Γ − V oc has been located at around 0.5 eV [152], but a universality to this relationship has been disproved [158]. This apparent universality is due to the influence of thermal motion on always the same energy scale, k B T .…”
Section: The Charge-density-dependent Open-circuit Voltagesupporting
confidence: 63%
“…4.9b also displays photovoltaic gaps Γ as the sum of the mean donor IE and acceptor EA: Since the chemical potentials for holes and electrons, µ e and µ h , lie fairly deep in the respective DOS, the difference Γ − V oc amounts to around 0.6 eV for the mildly disordered systems (P3HT, sexithiophene, pentacene), but grows considerably with energetic disorder, reaching 0.9 eV for D5M/C 60 . This finding is supported by a number of studies [152,157,158] where energetic disorder has been hypothesized as a contribution to the observed gap: Experimentally, Γ − V oc has been located at around 0.5 eV [152], but a universality to this relationship has been disproved [158]. This apparent universality is due to the influence of thermal motion on always the same energy scale, k B T .…”
Section: The Charge-density-dependent Open-circuit Voltagesupporting
confidence: 63%
“…For ZnPc/C 60 and F 4 ZnPc/C 60 , the loss term ᭝ is similar with approximately 0.4 eV and is remarkably small in comparison to other OPVCs. [ 5,7,8 ] In contrast, for F 8 ZnPc/C 60 -based devices a loss of 0.79 eV is detected. Due to an insuffi cient energetic offset at the D/A interface (see Figure 5 b), exciton dissociation is presumably limited in these devices.…”
Section: Investigation Of the J ( V ) Characteristicsmentioning
confidence: 84%
“…[ 1,2 ] which is attributed to radiative and nonradiative recombination processes, was estimated to be 0.4-0.6 eV at room temperature under AM 1.5 standard illumination conditions. [5][6][7][8] …”
Section: Introductionmentioning
confidence: 99%
“…43 Indeed, the difference between the donor HOMO and the acceptor LUMO determines V oc as a first approximation. 44 In addition, gap defect states are known to modulate the Fermi level position that ultimately establishes the output V oc . 35 Increased defect density in the aged device should in theory decrease the V oc as these defects should reduce Fermi level shift upon illumination.…”
Section: Discussionmentioning
confidence: 99%