Open-circuit mode drift mobility measurements in DLC films

Staryga, E.; Lipiński, A.; Mitura, S.; Sokołowska, A.

doi:10.1016/0925-9635(94)90285-2

Cited by 21 publications

(9 citation statements)

References 27 publications

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“…6 UNCD appears to be an intriguing material. Nitrogen has been shown to reduce the resistivity of amorphous carbons such as "diamondlike carbon" and "tetrahedrally bonded carbon" (ta-C) in the past, but the resulting mobility values were generally in the 10 −6 cm 2 V −1 s −1 range, 14,15 i.e., six orders of magnitude lower than this case and undetectable by the Hall effect. In single crystal and microcrystalline diamond, nitrogen is a substitutional donor with activation energy of 1.7 eV, 10 but can also form complexes (such as the N -V center) 16 which generally result in deep traps or compensation of any conductivity.…”

mentioning

confidence: 97%

n -type conductivity in ultrananocrystalline diamond films

Williams

Curat

Gerbi

et al. 2004

Applied Physics Letters

154

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Hall effect measurements have been carried out to determine the carrier density and mobilities in ultrananocrystalline diamond films grown with added nitrogen. The results show clear n-type conductivity with very low thermal activation energy. Mobility values of 1.5cm2V−1s−1 are found for a sheet carrier concentration of 2×1017cm−2. These measurements indicate that ultrananocrystalline films grown with high nitrogen levels in the growth gas mixture can have bulk carrier concentrations of up to 1021, which is very high for diamond films. The n-type nature of this material was also confirmed by Seebeck effect measurements.

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mentioning

confidence: 97%

n -type conductivity in ultrananocrystalline diamond films

Williams

Curat

Gerbi

et al. 2004

Applied Physics Letters

154

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“…The field dependence of conductivity and/or mobility was also observed in amorphous and hydrogenated carbon layers 25–27. Foulani et al 25 observed a relatively strong increase of electron mobility in hydrogenated carbon, especially in the layers with low graphite content at room temperature.…”

Section: Introductionmentioning

confidence: 95%

“…They found the field‐activated mobility showed a temperature dependence decreasing with increasing field strength, interpreted by assuming two exponential trap distributions. Mycielski et al 27 measured electron mobility in diamond‐like carbon layers. In summary, the obtained drift mobility values were of the order of 10 −8 –10 −6 cm 2 V −1 s −1 and the field dependence was weaker than in a‐SiH.…”

Section: Introductionmentioning

confidence: 99%

Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

Sielski

Jeszka

2012

Physica Status Solidi (a)

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The development of new technology in the electronics industry requires new dielectric materials. It is also important to understand the charge‐carrier transport mechanism in these materials. We examined the hole drift mobility in amorphous SiC dielectric thin films using the time‐of‐flight (TOF) method. Charge carriers were generated using an electron gun. The generated holes gave a dispersive TOF signal and the mobility was low. For electric field strengths above 4 × 105 V cm−1 the drift mobility shows a very strong dependence on the electric field and a weak temperature dependence (transport of “high‐energy” charge carriers). At lower electric fields and for thermalized charge carriers the mobility is practically field independent and thermally activated. The observed phenomenon was attributed to the changes in the effective energy of the generated carriers moving in the high electric fields and consequently in the density of localized states taking part in the transport.

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“…The significant findings in our previous work [31] on DLCbased CS-TENG provided us the necessary groundwork to investigate the DLC sliding-TENG attributing to its outstanding tribological, mechanical, and insulating characteristics of DLC films [32][33][34][35][36][37][38][39][40][41]. Apart from its well-known tribological and mechanical properties, DLC films possess high surface electrical resistivity ranging between 10 2 -10 16 Ω-m [42], low electron mobility (10 −11 -10 −12 cm 2 /V) owing to its amorphous nature, wide bandgap (1 -4 eV) [43] and high defect state density thus making the DLC film an ideal candidate for energy harvesting through contact electrification.…”

Section: Introductionmentioning

confidence: 99%

Development of Highly Durable Sliding Triboelectric Nanogenerator Using Diamond-Like Carbon Films

et al. 2020

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Climate change is affecting every being on the planet. The time has arrived to give a big push for harvesting renewable energy sources, thus reducing the dependencies on fossil fuels and chemical batteries. This inspired Nanotechnologists to explore energy harvesting techniques from the environment. Triboelectric nanogenerator (TENG) is one such emerging, promising, and a reliable technology to extract micropower from the abundantly available natural mechanical energy. In this study, we have addressed the durability issues of TENG using Diamond-like Carbon (DLC) films as a triboelectric surface. Our findings indicate a high potential for DLC films for TENG applications attributing to its outstanding tribological, mechanical and insulating properties. Hydrogenated DLC (H-DLC) film, Fluorinated DLC (F-DLC) film, and PTFE were used as dielectric surfaces on a rotary based sliding-TENG. The output performance of each pair differed with the sliding frequency where H-DLC/F-DLC pair produced the maximum output at a moderate frequency of 4 Hz. As the frequency was raised, H-DLC/PTFE pair exhibited the highest output at 10 Hz, equal to that of the Al/PTFE pair. The durability evaluation of DLC-TENG showed very promising outcomes producing stable output current for 2 h. This study is expected to encourage the development of DLC-based sliding-TENGs, with enhanced durability and output efficiency.

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Open-circuit mode drift mobility measurements in DLC films

Cited by 21 publications

References 27 publications

n -type conductivity in ultrananocrystalline diamond films

n -type conductivity in ultrananocrystalline diamond films

Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

Development of Highly Durable Sliding Triboelectric Nanogenerator Using Diamond-Like Carbon Films

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