Abstract:Failure analysis (FA) was encountered ion charging risk when using focused ion beam (FIB) to insert extra test pads for mixed signal integrated circuits (IC) on silicon-on-insulator (SOI). To overcome this challenge and to precisely locate the open circuit defect, this paper described an effective non-destructive FA method based on dynamic InGaAs photon emission microscopy and schematic/layout analysis to determine the open circuit type and position. Nano-probing and electron beam absorbed current (EBAC) was u… Show more
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