Online monitoring of IGBT junction temperature based on Vce measurement

Cao, Han; Ning, Puqi; Chai, Xiaoguang; Zheng, Dan; Kang, Yuting; Xu, Wen

doi:10.1007/s43236-020-00178-5

Cited by 8 publications

(4 citation statements)

References 30 publications

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“…In [7,17], an online estimation method of IGBT junction temperature based on V ce measurement is proposed, which designs a high-precision on-state voltage measurement circuit and combines the regression problem solving method to find the relationship model between on-state saturation voltage drop V ce,on , junction temperature T j and collector current I c , and based on this model, the on-line measurement of junction temperature can be realised. This method can also be popularised in the complex system.…”

Section: Model-drivenmentioning

confidence: 99%

“…An estimation process is adopted to generate the indicators from the measured signals. A simple example can be the lookup table when deducing the junction temperature from the voltage or current measurements, and the sensed voltage or current is also known as the temperature sensitivity electrical parameter (TSEP) [7,[16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

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Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction

et al. 2021

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The insulated gate bipolar transistor (IGBT) is one of the most fragile components in power electronics converters. In order to improve the reliability of IGBTs, various measurements are taken according to the condition monitoring (CM) technique. Traditional CM techniques include the measurement and estimation of the device operation conditions. Recently, emerging techniques have been developed, not only for the detection and estimation but also for the prognostics of IGBTs with the condition data. In this paper, a review is performed on the recent progress in the CM techniques for IGBTs. First, some emerging electrical and thermal measurements are reviewed. Based on the sensed data, the health indicator estimation techniques are summarised. Moreover, for the emerging prognostics and health management applications, some remaining using lifetime (RUL) prediction methods are reviewed. Finally, the research gaps and directions are discussed for the CM in IGBT applications.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Model-drivenmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction

et al. 2021

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“…To monitor the junction temperature under consideration, circuit-based approaches [21,22], thermal-model-based methods such as finite ele-ment methods [23,24], and experimental-measurement-based lab equipment such as IR cameras and NTC thermistor devices [25][26][27] can be applied. In addition, the change in the onstate collector-emitter voltage measured under a high load current can be used to indicate the junction temperature, as demonstrated in [28]. The short-circuit current of an IGBT can be measured as a temperature-sensitive parameter to estimate the junction tem-perature, as carried out in [29].…”

Section: Introductionmentioning

confidence: 99%

Estimation Technique for IGBT Module Junction Temperature in a High-Power Density Inverter

Okilly,

Choi,

Kwak

et al. 2023

Machines

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During the last few decades, insulated-gate bipolar transistor (IGBT) power modules have evolved as reliable and useful electronic parts due to the increasing relevance of power inverters in power infrastructure, reliability enhancement, and long-life operation. Excessive temperature stresses caused by excessive power losses frequently cause high-power-density IGBT modules to fail. As a result, module temperature monitoring techniques are critical in designing and selecting IGBT modules for high-power-density applications to guarantee that temperature stresses in the various module components remain within the rated values. In this paper, a module’s different losses were estimated, a heating pipe system for the thermal power cycling technique was proposed, and finite element method (FEM) thermal modeling and module temperature measurement were performed using ANSYS Icepak software version 2022 R1 to determine whether the IGBT module’s temperature rise was within acceptable bounds. To test the proposed technique, a proposed design structure of the practical railway application with a 3.3 MW traction inverter is introduced using commercialized IGBT modules from Semikron company with maximum temperature of about 150 °C. the FEM analysis results showed that the maximum junction temperature is about 109 °C which is in acceptable ranges, confirming the appropriate selection of the employed IGBT module for the target application.

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“…The short-circuit current causes accelerated aging and damage to the power modules [18] . The turn-on voltage with a high current is influenced by the operating current [19] . The aim of this study is to achieve online monitoring of the junction temperature of DSC insulated gate bipolar transistor (IGBT) power modules by using the on-state voltage with a large current.…”

Section: Introductionmentioning

confidence: 99%

Online Junction Temperature Measurement of Double-sided Cooling IGBT Power Module through On-state Voltage with High Current

Chai

Ning

Cao

et al. 2022

Chin. J. Electr. Eng.

Self Cite

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The aim of this study is to achieve online monitoring of the junction temperature of double-sided-cooling insulated gate bipolar transistor (IGBT) power modules by using the on-state voltage under a high current to maximize the utilization of IGBT power chips. Online junction temperature measurement plays an important role in improving the reliability of the inverter with IGBT, increasing the power density of the motor controller of electric vehicles, and reducing the cost of electric vehicles.

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Online monitoring of IGBT junction temperature based on Vce measurement

Cited by 8 publications

References 30 publications

Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction

Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction

Estimation Technique for IGBT Module Junction Temperature in a High-Power Density Inverter

Online Junction Temperature Measurement of Double-sided Cooling IGBT Power Module through On-state Voltage with High Current

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