Online condition monitoring of SiC devices using intelligent gate drive for converter performance improvement

Dyer, Jacob; Zhang, Zheyu; Wang, Fred; Costinett, Daniel; Tolbert, Leon M.; Blalock, Benjamin J.

doi:10.1109/wipda.2016.7799934

Cited by 10 publications

(3 citation statements)

References 17 publications

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“…Several precursors are proposed based on the device switching transients like turn-off delay time, gate plateau voltage/time, etc [70]- [72]. However, due to the inherent fast switching of SiC MOSFETs, aging monitoring by these precursors needs high Gate Oxide Degradation is another precursor for gate-oxide degradation monitoring [73].…”

Section: Precursor Selection For Condition Monitoringmentioning

confidence: 99%

“…-Monitoring circuits are In-situ. Shoot-Through Current, (ISht) [86] Gate Turn-On Peak Current, (IG,peak ) [71], [87]- [89] Internal Gate Resistance, (RG,int) [71], [87]- [89] Turn-On Delay Time, (Td,on) [90]- [92] Medium 0.5% / Turn-Off Delay Time, (Td,off ) [70], [96], [97] Turn-Off di/dt, -A large gate resistance needs to achieve detectable resolution.…”

Section: Hardmentioning

confidence: 99%

“…This parameter is highly sensitive to noise and has relatively low linearity. The switching parameters like turnon delay time [90]- [92], turn-on di/dt [83], [93]- [95], turn-off delay time [70], [96], [97], and turn-off di/dt [95], are presented in the literature for junction temperature measurement of SiC MOSFETs. A large gate resistance insertion during measurement is necessary to achieve sufficient accuracy for these parameters.…”

Section: Hardmentioning

confidence: 99%

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AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters

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Vankayalapati

Sajadi

et al. 2023

IEEE Trans. Veh. Technol.

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AC power cycling tests allow the most realistic reliability assessment by applying close to real stress to the device or module under test to meet functional safety standards, which is highly critical for traction applications. This paper presents a comprehensive guideline and shares critical know-how to develop a 120 KVA AC power cycling test setup for high-power Silicon Carbide (SiC) modules. As of today, traction applications can not generate an early warning signal for drivers to replace critical components on time. For this purpose, the suitable precursors for all dominant failure mechanisms are discussed, and the corresponding condition monitoring tools are proposed to monitor the device aging on power converters. These condition monitoring tools are integrated into the built-in desaturation protection circuit of the electric vehicle (EV) gate driver for low-cost, practical implementation. The on-resistance of all twelve switches is monitored online as a temperature-sensitive electrical parameter (TSEP) to measure the junction temperature of the devices. To avoid heavy processing load in the microcontroller, the out-of-order equivalent time sampling technique is developed for data sampling, which leads to a measurement error of less than 1.5%. In addition, the design considerations regarding common mode noise and aging effect on DESAT protection are investigated, and experimental findings are presented.

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Section: Precursor Selection For Condition Monitoringmentioning

confidence: 99%