2019
DOI: 10.1016/j.snb.2018.10.138
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One step synthesis of branched SnO2/ZnO heterostructures and their enhanced gas-sensing properties

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Cited by 193 publications
(65 citation statements)
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“…In the Sn 3d XPS spectrum in Figure 2b, the peaks of Sn 3d 5/2 at 486.3 eV and Sn 3d 3/2 at 494.6 eV corresponding to Sn 4+ were observed, which are attributed to the formation of SnO 2 . [ 37–40 ] The C 1s XPS spectrum in Figure 2c includes peaks corresponding to CC, CO, and C=O bonds at 284.1, 285.4, and 288.4 eV, respectively. [ 41–44 ] The highest intensity of the CC peak among the three peaks confirms the carbonization of PVA during heat‐treatment.…”
Section: Resultsmentioning
confidence: 99%
“…In the Sn 3d XPS spectrum in Figure 2b, the peaks of Sn 3d 5/2 at 486.3 eV and Sn 3d 3/2 at 494.6 eV corresponding to Sn 4+ were observed, which are attributed to the formation of SnO 2 . [ 37–40 ] The C 1s XPS spectrum in Figure 2c includes peaks corresponding to CC, CO, and C=O bonds at 284.1, 285.4, and 288.4 eV, respectively. [ 41–44 ] The highest intensity of the CC peak among the three peaks confirms the carbonization of PVA during heat‐treatment.…”
Section: Resultsmentioning
confidence: 99%
“…This large device-to-device deviation can be attributed to the displacement of PS microspheres under constant plasma bombarding, which leads to a disordered cross-linked network. In comparison with the various nanostructured SnO 2 prepared by other methods in Table 1, the crosslinked SnO 2 /NiO network exhibited comparable sensitivity [19,23,47,[49][50][51][52]. We also investigated the ethanol sensitivity of other MEMS compatible sensing materials in Table 1, such as DPN deposited Au/SnO 2 nanocomposites, ZnO nanowires grown on a MEMS microplate, and ZnO tetrapods deposited on a microheater [37,38,51].…”
Section: Gas-sensing Performancementioning
confidence: 99%
“…For example, triangle array or cross-linked network can be formed depending on the plasma etching time of PS spheres through the same processes: (i) self-assemble PS spheres, (ii) plasma etching of PS spheres, (iii) deposit MOS thin film, and (iv) remove PS spheres. Apart from creating more active adsorption sites, forming heterostructure to improve the sensing performance of MOS-based gas sensors has been intensively studied, which is a low cost, environmentalfriendly, and easy-to-implement method [25,[43][44][45][46][47][48]. The sputtering target can be designed by mixing two or more MOS elements, such as SnO 2 /NiO, SnO 2 /ZnO, SnO 2 / WO 3 , etc.…”
Section: Introductionmentioning
confidence: 99%
“…As the important gas sensing materials, SnO 2 and ZnO having band gaps of 3.6 eV and 3.4 eV, individually, previously reported for gas sensors. Recently, several studies have shown that sensing performance SnO 2 or ZnO can be highly enhanced by the formation of SnO 2 /ZnO heterostructures [15].…”
Section: Introductionmentioning
confidence: 99%