One-step synthesis and gas sensing characteristics of urchin-like In2O3

Xu, Xiumei; Mei, Xiaodong; Zhao, Peilu; Sun, Peng; Sun, Yangfeng; Hu, Xiaolong; Lu, Geyu

doi:10.1016/j.snb.2013.05.029

Cited by 34 publications

(13 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A c c e p t e d M a n u s c r i p t 14 According to the previous research by Kim et al [24], the gas response can be written as follows:…”

Section: Page 14 Of 37mentioning

confidence: 99%

“…Resistive gas sensors based on metal oxide semiconductors such as SnO 2 [1,2], ZnO [3,4], TiO 2 [5,6], WO 3 [7][8][9][10][11][12], In 2 O 3 [13,14], α-Fe 2 O 3 [15], and NiO [16] occupy the significant positions in the field of gas sensors for monitoring and detecting inflammable, explosive, or toxic gases due to the advantages of low cost, simple operation and portability. Extensive research efforts have been committed to develop high-performance gas sensors with high sensitivity and low detection limit [17].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ultrasensitive and low detection limit of acetone gas sensor based on W-doped NiO hierarchical nanostructure

Wang

Liu

Yang

et al. 2015

Sensors and Actuators B: Chemical

Self Cite

137

View full text Add to dashboard Cite

“…A c c e p t e d M a n u s c r i p t 14 According to the previous research by Kim et al [24], the gas response can be written as follows:…”

Section: Page 14 Of 37mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultrasensitive and low detection limit of acetone gas sensor based on W-doped NiO hierarchical nanostructure

Wang

Liu

Yang

et al. 2015

Sensors and Actuators B: Chemical

Self Cite

137

View full text Add to dashboard Cite

“…The range of the Response% of all the sensors normalized to (R o − R g )/ R o *100 % is from 0 to 100 % due to R g smaller than R o and greater than 0. Thus, these results definitely show that the In 2 O 3 nanotower hydrogen sensor has basically achieved better responses than those of the reported sensors [3,[26][27][28][29][30][31][32][33][34][35][36][37][38].…”

Section: Resultsmentioning

confidence: 66%

In2O3 Nanotower Hydrogen Gas Sensors Based on Both Schottky Junction and Thermoelectronic Emission

Zheng¹,

Zhu²,

Wang³

2016

Nano Online

View full text Add to dashboard Cite

Indium oxide (In 2 O 3) tower-shaped nanostructure gas sensors have been fabricated on Cr comb-shaped interdigitating electrodes with relatively narrower interspace of 1.5 μm using thermal evaporation of the mixed powders of In 2 O 3 and active carbon. The Schottky contact between the In 2 O 3 nanotower and the Cr comb-shaped interdigitating electrode forms the Cr/In 2 O 3 nanotower Schottky diode, and the corresponding temperature-dependent I-V characteristics have been measured. The diode exhibits a low Schottky barrier height of 0.45 eV and ideality factor of 2.93 at room temperature. The In 2 O 3 nanotower gas sensors have excellent gas-sensing characteristics to hydrogen concentration ranging from 2 to 1000 ppm at operating temperature of 120-275°C, such as high response (83 % at 240°C to 1000 ppm H 2), good selectivity (response to H 2 , CH 4 , C 2 H 2 , and C 3 H 8), and small deviation from the ideal value of power exponent β (0.48578 at 240°C). The sensors show fine long-term stability during exposure to 1000 ppm H 2 under operating temperature of 240°C in 30 days. Lots of oxygen vacancies and chemisorbed oxygen ions existing in the In 2 O 3 nanotowers according to the x-ray photoelectron spectroscopy (XPS) results, the change of Schottky barrier height in the Cr/In 2 O 3 Schottky junction, and the thermoelectronic emission due to the contact between two In 2 O 3 nanotowers mainly contribute for the H 2 sensing mechanism. The growth mechanism of the In 2 O 3 nanotowers can be described to be the Vapor-Solid (VS) process.

show abstract

“…The MOS-based gas sensing device has drawn the interest of many researchers to improve the sensing performance in terms of its selectivity, sensitivity, operating temperature, response and recovery time [251][252][253][254][255]. Various NMOS-based O 3 gas sensors, such as ZnO [255][256][257][258][259][260][261][262][263], SnO 2 [264][265][266], WO 3 [267][268][269], CuO [270], In 2 O 3 [271][272][273][274][275][276] and ZnO/SnO 2 [277], etc., with their fabrication method and sensor parameters such as operating temperature (°C), selectivity, stability, response/ recovery time (t res /t rec ) and LOD have been demonstrated in table 7. The sensing mechanism of NMOS for O 3 is based on the adsorption of gaseous molecules (oxygen, of air) on the surface of the metal oxide.…”

Section: Metal Oxide Semiconductor-based Ozone Gas Sensorsmentioning

confidence: 99%

Nanostructured metal oxide semiconductor-based sensors for greenhouse gas detection: progress and challenges

Gautam¹,

Sharma²,

Tyagi³

et al. 2021

R. Soc. open sci.

View full text Add to dashboard Cite

Climate change and global warming have been two massive concerns for the scientific community during the last few decades. Anthropogenic emissions of greenhouse gases (GHGs) have greatly amplified the level of greenhouse gases in the Earth's atmosphere which results in the gradual heating of the atmosphere. The precise measurement and reliable quantification of GHGs emission in the environment are of the utmost priority for the study of climate change. The detection of GHGs such as carbon dioxide, methane, nitrous oxide and ozone is the first and foremost step in finding the solution to manage and reduce the concentration of these gases in the Earth's atmosphere. The nanostructured metal oxide semiconductor (NMOS) based technologies for sensing GHGs emission have been found most reliable and accurate. Owing to their fascinating structural and morphological properties metal oxide semiconductors become an important class of materials for GHGs emission sensing technology. In this review article, the current concentration of GHGs in the Earth's environment, dominant sources of anthropogenic emissions of these gases and consequently their possible impacts on human life have been described briefly. Further, the different available technologies for GHG sensors along with their principle of operation have been largely discussed. The advantages and disadvantages of each sensor technology have also been highlighted. In particular, this article presents a comprehensive study on the development of various NMOS-based GHGs sensors and their performance analysis in order to establish a strong detection technology for the anthropogenic GHGs. In the last, the scope for improved sensitivity, selectivity and response time for these sensors, their future trends and outlook for researchers are suggested in the conclusion of this article.

show abstract

One-step synthesis and gas sensing characteristics of urchin-like In2O3

Cited by 34 publications

References 41 publications

Ultrasensitive and low detection limit of acetone gas sensor based on W-doped NiO hierarchical nanostructure

Ultrasensitive and low detection limit of acetone gas sensor based on W-doped NiO hierarchical nanostructure

In2O3 Nanotower Hydrogen Gas Sensors Based on Both Schottky Junction and Thermoelectronic Emission

Nanostructured metal oxide semiconductor-based sensors for greenhouse gas detection: progress and challenges

Contact Info

Product

Resources

About