One-Step Sneak-Path Free Read Scheme for Resistive Crossbar Memory

Abstract

A one-step sneak-path free read scheme for resistive crossbar memory is proposed in this article. During read operation, it configures the crossbar array into a four-terminal resistance network, which is composed of the selected cell and three other resistors corresponding to unselected cells that contribute to the sneak-path. Two sensing voltages with equal potential are applied to three terminals of the network. One is for sensing the resistance of the selected cell; the other is for creating zero-voltage drop across one of the three resistors, which connects the sneak-path to the selected cell. This effectively suppresses the current injected by the sneak-path to the selected cell-sensing loop. This work also proposes a cost-effective data-encoding circuit that guarantees that at least half of the memory cells are in a high-resistance state, which further minimizes sneak-path current. The impact of key design parameters, such as sensing voltage, switch on-resistance, and the ratio of memory cell resistances in different states, as well as nonideal effects are investigated. Equations for estimating the maximum array size to share a single read circuit are derived. The effectiveness of the proposed design has been validated via circuit simulations. Impacts of the word-/bit-line resistance are also analyzed.

E‐Skin Tactile Sensor Matrix Pixelated by Position‐Registered Conductive Microparticles Creating Pressure‐Sensitive Selectors

“…In addition, because each whisker runs passively a large number of sensor integration is not easy. Eliminating electrical cross talks between the sensors is the key to achieve enough spatial resolution . For this purpose, some advances have been made in the fabrication of transistor‐operated tactile sensor arrays .…”

A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

“…The SPC problem can be described as the leakage from neighboring unselected cells (USC), which significantly results in the cross-talk and distorts the data of selected cell (SC) during reading operation. To mitigate the sneak paths currents, a diode or a selector device series with a RRAM cell to form 1D-1R or 1S-1R structure has been developed 11–15 . Several solutions on selection devices including Mott transition switches, nonlinear volatile switches, threshold switches, rectifying diode devices etc.…”