One-step, non-contact pattern transfer by direct-current plasma immersion ion implantation

Abstract

A one-step, non-contact pattern transfer method by direct-current plasma immersion ion implantation is demonstrated. Complex patterns with micrometre-size linewidths can be transferred onto a silicon wafer by placing the metal masks 4 mm away from the wafer. Scanning electron microscopy reveals that by negatively biasing the metal mask, ions coming from a hole with a diameter of 200 µm in the mask can be confined to a smaller region of 100 µm. The ion focusing effect is confirmed by two-dimensional multiple-grid particle-in-cell simulation.

Demagnification and Magnification Effects in One-Step Noncontact Pattern Transfer by Direct-Current Plasma Immersion Ion Implantation

“…5. These contour plots look like a number of snapshots on the vertical axis typical of particle simulation because the ion density is discrete for PIC particles [2]. When no metal ring is inserted, the ions are implanted into the sample without drift in the x-direction [ Fig.…”

“…1, and the detailed description can be found in [2]. The negatively biased sample stage is shielded from the plasma by the metal cage [6], and the silicon wafer is placed on the sample stage directly.…”

“…To investigate the demagnify and magnify effects generated by placing the metal ring between the mask and the substrate, a 2-D Cartesian coordinate system with a width of 2 mm and a length of 60 mm is simulated by the multiple-grid PIC method [2], [10], [11]. The substrate is at the bottom boundary, and a horizontal fine mesh is set 4 mm above the substrate.…”

“…been demonstrated, and images of the same size can be transferred from a mask to the silicon wafer [2].…”