“…For better understanding of the charge transport mechanism in devices, the thermionic emission (TE) theory is used, 46 and according to this theory, the current of a diode may be stated as follows, eqs 2–4 47
where![]()
where I 0 is the saturation current, q is the electronic charge, k is the Boltzmann constant, T is the temperature in kelvin, V is the forward bias voltage, η is the ideality factor, ϕ B is the effective barrier height at zero bias, A is the diode area (7.065 × 10 –6 m 2 ), and A * is the effective Richardson constant (1.20 × 10 6 A m –2 K –2 ). According to Cheung, the forward bias I – V characteristics (in terms of series resistance) may be stated as 48 eq 5 and the series resistance is calculated 49 from eqs 6–8
where IR S indicates the voltage drop across the series resistance of the device.![]()
and H ( J ) can be stated as
From the d V /dln( J ) vs J plot, the series resistance, R S , and ideality factor, η, for all of the devices in dark- and photo-conditions are determined by the slope and intercept, respectively (Figure 8). Using the y-axis intercept of the H ( J ) vs J curve, the potential barrier height (ϕ b ) for the devices is calculated, and the slope of this plot provides a second determination of the series resistance.…”