2015
DOI: 10.1039/c5ra17795b
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One step hydrothermal synthesis of a rGO–TiO2 nanocomposite and its application on a Schottky diode: improvement in device performance and transport properties

Abstract: rGO–TiO2 nanocomposite based Schottky diode shows improved performance and better transport properties compared to TiO2.

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Cited by 69 publications
(49 citation statements)
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“…This photocurrent value of 10% Li:TiO 2 /p‐Si diode at −5 V under 30 mW cm −2 is higher than the Al/TiO 2 /p‐Si structure with a value of ≈10 −5 A under 100 mW cm −2 , [ 63 ] the TiO 2 :ZnO/p‐Si structure with a value of ≈5 × 10 −5 A under 100 mW cm −2 [ 70 ] and lower than 5% coumarin:TiO 2 /p‐Si with a value of 1.33 × 10 −4 A, [ 61 ] and NiO:TiO 2 /n‐Si with a value of 5.25 × 10 −4 A. [ 60 ] Das et al [ 71 ] fabricated indium tin oxide (ITO)/TiO 2 /Al and ITO/reduced graphene oxide (rGO)–TiO 2 /Al Schottky diodes by the spin‐coating method. As a result of transient photocurrent measurements, they reported that the photosensitivity of the ITO/rGO–TiO 2 /Al increased by about 42% compared with the ITO/TiO 2 /Al diode.…”
Section: Resultsmentioning
confidence: 99%
“…This photocurrent value of 10% Li:TiO 2 /p‐Si diode at −5 V under 30 mW cm −2 is higher than the Al/TiO 2 /p‐Si structure with a value of ≈10 −5 A under 100 mW cm −2 , [ 63 ] the TiO 2 :ZnO/p‐Si structure with a value of ≈5 × 10 −5 A under 100 mW cm −2 [ 70 ] and lower than 5% coumarin:TiO 2 /p‐Si with a value of 1.33 × 10 −4 A, [ 61 ] and NiO:TiO 2 /n‐Si with a value of 5.25 × 10 −4 A. [ 60 ] Das et al [ 71 ] fabricated indium tin oxide (ITO)/TiO 2 /Al and ITO/reduced graphene oxide (rGO)–TiO 2 /Al Schottky diodes by the spin‐coating method. As a result of transient photocurrent measurements, they reported that the photosensitivity of the ITO/rGO–TiO 2 /Al increased by about 42% compared with the ITO/TiO 2 /Al diode.…”
Section: Resultsmentioning
confidence: 99%
“…Determination of the ideality factor, series resistance, and barrier height of a Schottky diode is necessary to assess the device performance. These parameters have been derived from Cheung’s eqs 6–8 4042 andwhere R s signifies the series resistance of the diode. The d V /dln( I ) versus I and H ( I ) versus I plots are portrayed in Figure 7.…”
Section: Results and Discussionmentioning
confidence: 99%
“…For better understanding of the charge transport mechanism in devices, the thermionic emission (TE) theory is used, 46 and according to this theory, the current of a diode may be stated as follows, eqs 2–4 47 wherewhere I 0 is the saturation current, q is the electronic charge, k is the Boltzmann constant, T is the temperature in kelvin, V is the forward bias voltage, η is the ideality factor, ϕ B is the effective barrier height at zero bias, A is the diode area (7.065 × 10 –6 m 2 ), and A * is the effective Richardson constant (1.20 × 10 6 A m –2 K –2 ). According to Cheung, the forward bias I – V characteristics (in terms of series resistance) may be stated as 48 eq 5 and the series resistance is calculated 49 from eqs 6–8where IR S indicates the voltage drop across the series resistance of the device.and H ( J ) can be stated asFrom the d V /dln( J ) vs J plot, the series resistance, R S , and ideality factor, η, for all of the devices in dark- and photo-conditions are determined by the slope and intercept, respectively (Figure 8). Using the y-axis intercept of the H ( J ) vs J curve, the potential barrier height (ϕ b ) for the devices is calculated, and the slope of this plot provides a second determination of the series resistance.…”
Section: Resultsmentioning
confidence: 99%