Thin film Plasma polymerized naphthalene was formed by plasma enhanced chemical vapor deposition as emissive layer. The structure analysis revealed forming a conjugated polymer with a 3-D crosslinked structure. By increasing the plasma power, the optical properties including UV-Vis, photoluminescence and electroluminescence spectra showed two domains with different behaviors.ABSTRACT: Polymer light-emitting devices were fabricated utilizing plasma polymerized thin films as emissive layers. These conjugated polymer films were prepared by RF Plasma Enhanced Chemical Vapor Deposition (PECVD) using naphthalene as monomer. The effect of plasma parameters on the structure and optical properties of the conjugated polymers was investigated by applying different plasma powers. The fabricated devices with structure of ITO/PEDOT:PSS/ plasma polymerized Naphthalene/Alq3/Al showed broadband Electroluminescence (EL) emission peaks with center at 535-550 nm. Fourier transform infrared (FTIR) and Raman spectroscopies confirmed that a conjugated polymer film with a 3-D cross-linked network was developed by C-H bond rupture and ring opening process during the plasma polymerization. By increasing the power, ring opening process and cross-linking increased and the products were formed as highly cross-linked polymer films. In addition, as the plasma power increased, the optical properties showed two domains, up to 200 w, the electroluminescence, photoluminescence (PL) and UV-Vis spectra red-shifted and broadened due to increasing the conjugation length, forming more complex polymer and rising the excimeric emissions. At higher powers, a reverse behavior was observed. The conjugation length reduced and a change in the excimeric emission dominance has happened. Also, the relation between the film structure and plasma species was investigated using Optical Emission Spectroscopy (OES).