One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma

Yoon, Ho Geun; Shin, Somyeong; Kwon, SeongYong; Cho, Hyun-Min; Kim, Sang-Gab; Hong, MunPyo

doi:10.3390/ma14082025

Cited by 11 publications

(4 citation statements)

References 28 publications

(25 reference statements)

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“…The relatively low channel count (16 electrode sites) of the devices used in this study is a limitation for their use in brain-machine interfaces, which benefit from high-channel counts for neuronal decoding [ 25 ]. Our group is currently investigating strategies to increase channel density, while maintaining a small cross-sectional dimension, which may include electron beam lithography [ 61 , 62 ] and multilayer metallization [ 63 , 64 ].…”

Section: Discussionmentioning

confidence: 99%

Chronic Stability of Local Field Potentials Using Amorphous Silicon Carbide Microelectrode Arrays Implanted in the Rat Motor Cortex

et al. 2023

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Implantable microelectrode arrays (MEAs) enable the recording of electrical activity of cortical neurons, allowing the development of brain-machine interfaces. However, MEAs show reduced recording capabilities under chronic conditions, prompting the development of novel MEAs that can improve long-term performance. Conventional planar, silicon-based devices and ultra-thin amorphous silicon carbide (a-SiC) MEAs were implanted in the motor cortex of female Sprague–Dawley rats, and weekly anesthetized recordings were made for 16 weeks after implantation. The spectral density and bandpower between 1 and 500 Hz of recordings were compared over the implantation period for both device types. Initially, the bandpower of the a-SiC devices and standard MEAs was comparable. However, the standard MEAs showed a consistent decline in both bandpower and power spectral density throughout the 16 weeks post-implantation, whereas the a-SiC MEAs showed substantially more stable performance. These differences in bandpower and spectral density between standard and a-SiC MEAs were statistically significant from week 6 post-implantation until the end of the study at 16 weeks. These results support the use of ultra-thin a-SiC MEAs to develop chronic, reliable brain-machine interfaces.

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Section: Discussionmentioning

confidence: 99%

Chronic Stability of Local Field Potentials Using Amorphous Silicon Carbide Microelectrode Arrays Implanted in the Rat Motor Cortex

et al. 2023

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“…resonance-reactive ion etching system (1 st Proto-type chamber) [7] Previous work of 1 st Proto-type ECR dry etching chamber for ITO/Ag/ITO etching process is based on the use of H2 and HCl gases. The plasma chemistry of HCl has similar properties to that of Cl2 + H2; however, it also produces chlorine and hydrogen ions at a ratio of 1:1 under dissociation, which makes its use a more efficient approach than breaking high-energy bonding hydrogen molecules.…”

Section: Figure 3 Schematic Diagram Of An Electron Cyclotronmentioning

confidence: 99%

“…Figure 4. Etch rate of ITO and Ag single-layered films, assessed following changes in H2 concentration in the total gas flow [7]. …”

mentioning

confidence: 99%

55‐3: Development of Low‐Temperature Metal Dry‐Etching Equipment via ECR Plasma Source

Kim¹,

Jung²,

Jang³

et al. 2022

Symp Digest of Tech Papers

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This paper presents the dry etching performance and expectation of highly conductive thin metal films that are hardly etched at low temperature with conventional plasma dry etching equipment. Dry etching is performed using a combination of H2 and HCl gases in a reactive ion etching system with low temperature susceptor and electron cyclotron resonance (ECR) plasma source. We could achieve high electron temperature enough to dissociate and ionize H and Cl radicals from H2 and HCl molecules.

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“…The ITO/Ag/ITO structure has been employed as the TCLs in the LEDs and optimized the annealing conditions to improve the light output power. 34,35 Up to now, the IAI structure has not been used in the GaN-based LEDs.…”

mentioning

confidence: 99%

Improved Efficiency Droop of 370 nm UV LEDs with ITO/Au/ITO Structure

Fan,

Xu,

Huang

et al. 2023

ECS J. Solid State Sci. Technol.

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A method of indium-tin oxide /Au/ indium-tin oxide (IAI) structure as transparent conductive layer to improve the current spreading and suppress efficiency droop of ultraviolet light-emitting diodes (UV-LEDs) is investigated. The morphology and distribution of Au clusters formed by annealing are investigate by atomic force microscope and scanning electron microscope. Compared with the UV-LED without Au clusters, the forward voltage of UV-LED is reduced by 5.9% at 20 mA, light output power and wall plug efficiency increase by 64.2% and 84.2% at 300 mA for the UV-LED with IAI structure as the thickness of the Au interlayer is 1 nm. In addition, light emission distribution results show that by inserting Au interlayer, current distributes more uniform and the current spreading characteristics of UV-LED are improved. Ultimately, efficiency droop of the LED has been suppressed.

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One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma

Cited by 11 publications

References 28 publications

Chronic Stability of Local Field Potentials Using Amorphous Silicon Carbide Microelectrode Arrays Implanted in the Rat Motor Cortex

Chronic Stability of Local Field Potentials Using Amorphous Silicon Carbide Microelectrode Arrays Implanted in the Rat Motor Cortex

55‐3: Development of Low‐Temperature Metal Dry‐Etching Equipment via ECR Plasma Source

Improved Efficiency Droop of 370 nm UV LEDs with ITO/Au/ITO Structure

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