One phonon resonant Raman scattering in semiconductor quantum wires: Magnetic field effect

et al. 2018

Phys. Scr.

In this work, the electron states corresponding to a semiconductor quantum well wire grown on a GaAs/AlGaAs matrix with a cylindrical symmetry, in the presence of an external electric field which is homogenous and perpendicular to the axis of the system, is obtained. This study takes into consideration the partial and total confinement of the charge carriers, and assumes T=0 K. The model on which this is based considers a system of parabolic bands, which unfolds in a system of sub-bands due to confinement. In addition, the selection rules for intraband and interband optic transitions are studied.

Section: Introductionmentioning

confidence: 99%

Electron states in a semiconductor quantum well wire in presence of an external transversal electric field

Fernández-Lozada

et al. 2018

Phys. Scr.

“…The Raman differential cross-section in a volume per unit solid angle for incoming light of frequency ω l and scattered light of frequency ω s is given in Refs. [24] and [25], and it can be written as…”

Section: Raman Cross-sectionmentioning

confidence: 99%

“…( 4). We use the condition 𝑘 = 0 for the radiation field; [24,42] thus, by considering Eqs. ( 1) and ( 6), the following matrix elements are obtained:…”

Section: Raman Cross-sectionmentioning

confidence: 99%

“…The electron Raman scattering has been studied from a theoretical point of view in various systems, such as quantum well, quantum wire (cross-section with cylindrical disk geometry and also with square geometry), and quantum dot systems. These studies considered the interband and intrasub-band transitions with and without the participation of confinement phonons, also in the presence and absence of external electric and magnetic fields; [24][25][26][27][28][29][30][31][32][33][34] the bulk semiconductor, considering the presence of electric and magnetic fields, was studied too. [35][36][37] Surface enhanced Raman scattering is one of the most powerful probing methods, which is non-destructive, real-time, good at highly sensitive characterization.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

Jalil

et al. 2015

Chinese Phys. B

Self Cite

We study the electron states and the differential cross section for an electron Raman scattering process in a semiconductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a GaAs/Al 0.35 Ga 0.65 As matrix. The system is modeled by considering T = 0 K and also a single parabolic conduction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted.

“…The electron Raman scattering has been studied from a theoretical point of view in various systems. These studies considered the interband and intraband transitions with and without the participation of confinement phonons, also in the presence and absence of external electric and magnetic fields; [4][5][6][7][8][9][10][11][12][13][14] the bulk semiconductor, considering the presence of electric and magnetic fields, was also studied. [15][16][17] Surface enhanced Raman scattering is one of the most powerful probing methods, which is non-destructive, real-time, and good at highly sensitive characterization.…”

Section: Introductionmentioning

confidence: 99%

Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

Munguía-Rodríguez

et al. 2016

Chinese Phys. B

The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated, and expressions for the electronic states are presented. The system is modeled by considering T = 0 K and also with a single parabolic conduction band, which is split into a subband system due to the confinement. The gain and differential cross-section for an electron Raman scattering process are obtained. In addition, the emission spectra for several scattering configurations are discussed, and interpretations of the singularities found in the spectra are given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.