One-phonon-assisted electron Raman scattering in quantum well wires and free-standing wires

Bergues, J M; Betancourt-Riera, Ri.; Riera, R.; Marı́n, J. L.

doi:10.1088/0953-8984/12/36/312

Cited by 24 publications

(16 citation statements)

References 29 publications

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“…In this paper, the QWW geometry is cylindrical with circular cross-section of radius r 0 and length L. ing a single conduction (valence) band split into a subband system due to electron confinement within the structure, in the envelope function approximation, the wave functions can be written as [31] c j ¼ ½ ffiffiffiffiffiffiffiffi ffi 2pL p À1 e Àiðn j fþk z j zÞ u j AJ n j w n j m j r r 0…”

Section: Model and Theorymentioning

confidence: 99%

Electron Raman scattering in quantum well wires

Zhao

Liu

2007

Physica B: Condensed Matter

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Section: Model and Theorymentioning

confidence: 99%

Electron Raman scattering in quantum well wires

Zhao

Liu

2007

Physica B: Condensed Matter

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“…The electron Raman scattering has been studied from a theoretical point of view in various systems, such as quantum well, quantum wire (cross-section with cylindrical disk geometry and also with square geometry), and quantum dot systems. These studies considered the interband and intrasub-band transitions with and without the participation of confinement phonons, also in the presence and absence of external electric and magnetic fields; [24][25][26][27][28][29][30][31][32][33][34] the bulk semiconductor, considering the presence of electric and magnetic fields, was studied too. [35][36][37] Surface enhanced Raman scattering is one of the most powerful probing methods, which is non-destructive, real-time, good at highly sensitive characterization.…”

Section: Introductionmentioning

confidence: 99%

Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

Betancourt-Riera

Jalil

et al. 2015

Chinese Phys. B

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We study the electron states and the differential cross section for an electron Raman scattering process in a semiconductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a GaAs/Al 0.35 Ga 0.65 As matrix. The system is modeled by considering T = 0 K and also a single parabolic conduction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted.

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“…In fact, based on the dielectric continuum model (DCM), the optical phonon modes in zinc‐blende GaAs‐based Q1D NWs and quantum wires (QWRs) have been widely reported 20, 45–47. Within the framework of the DCM and Loudon's uniaxial crystal model 48, the investigations of the phonon modes have been successfully extended from the zinc‐blende GaAs‐based quantum confined systems to the wurtzite nitride quantum systems 38–44.…”

Section: Introductionmentioning

confidence: 99%

Binding energies of bound polaron in a wurtzite nitride nanowire: Contributions of IO and QC phonon modes

Zhang

2011

Physica Status Solidi (b)

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By employing the two-parameter variational approach, the binding energies of bound polarons in a quasi-one-dimensional wurtzite nanowire (NW) are investigated. Two types of polar optical phonon modes, i.e., the interface optical (IO) and quasiconfined (QC) phonon modes of wurtzite NWs are taken in account. The results reveal that the phonon contribution to binding energy of bound polaron in GaN NWs reaches $370 meV. The quite large contribution of phonon modes to the total binding energy is mainly ascribed to the very strong electron-phonon coupling constant in GaN materials. Moreover, the IO modes plays more important role to the binding energies of bound polaron as the NW radius is small, while the QC modes dominates as the NW radius is relatively large. The calculated results of impurity binding energy are quite consistent with the recent experimental measurement. The numerical results also show that the two-parameter variational approach is necessary and suitable for the description of impurity states in wurtzite GaN NW structures. 1 Introduction Since the pioneering experimental work of Fan's group [1] on the synthesis of the first wurtzite GaN nanorods, the quasi-1-dimensional (Q1D) GaN-based nanowires (NWs) have attracted a considerable amount of attentions both in theoretical and experimental investigations [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. This is mainly due to the following three evident facts: the nitride materials (including GaN, AlN, InN, and their ternary compounds, AlGaN and InGaN) with strong atomic bonding and wide and adjustable directbandgap, which make them quite potential as a basis for the creation of reliable high-temperature and high-frequency nano-optoelectronic devices such as field-effect-transistors (FETs), high-brightness blue/green light-emitting diodes and laser diodes as well as photodetectors [2][3][4][5]; Q1D structure' confinement of NWs for carriers in two dimensions and freedom in the last dimension, promising more efficient lasers and optical gain as well as possible applications for optical waveguide and photovoltaic elements in comparisons with quantum wells (QWs) and quantum dots (QDs) [6][7][8][9][10]; the Q1D NW systems also playing an important role in testing and understanding fundamental concepts, such as the role of dimensionality and size in optical, electrical, and mechanical properties [11][12][13][14][15][16].

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One-phonon-assisted electron Raman scattering in quantum well wires and free-standing wires

Cited by 24 publications

References 29 publications

Electron Raman scattering in quantum well wires

Electron Raman scattering in quantum well wires

Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

Binding energies of bound polaron in a wurtzite nitride nanowire: Contributions of IO and QC phonon modes

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