One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography

Wu, Wei; Jung, Gun‐Young; Olynick, Deirdre L.; Straznicky, Joseph; Li, Z.; Li, X.; Ohlberg, Douglas A. A.; Chen, Y.; Wang, Shih-Yuan; Liddle, J. Alexander; Tong, William M.; Williams, R. Stanley

doi:10.1007/s00339-004-3176-y

Cited by 124 publications

(87 citation statements)

References 10 publications

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“…Molecular electronics have stimulated considerable interest as a technology that offers the prospect of scaling down device dimensions to a few nanometers and that also promotes a practical introduction to high-density memory applications (Chen et al, 1999;Reed et al, 2001;Chen et al, 2003;Lau et al, 2004;Wu et al, 2005;Mendes et al, 2005;Green et al, 2007). Especially, in the ITRS 2009 edition, molecular memory devices have been expected as candidates for beyond-CMOS devices since they offer the possibility of nanometerscale components.…”

Section: Background Of Molecular Electronic Devicesmentioning

confidence: 99%

Lithography-Free Nanostructure Fabrication Techniques Utilizing Thin-Film Edges

Kaiju¹,

Kondo²,

Ishibashi³

2011

Recent Advances in Nanofabrication Techniques and Applications

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Section: Background Of Molecular Electronic Devicesmentioning

confidence: 99%

Lithography-Free Nanostructure Fabrication Techniques Utilizing Thin-Film Edges

Kaiju¹,

Kondo²,

Ishibashi³

2011

Recent Advances in Nanofabrication Techniques and Applications

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“…This novel paradigm, the crossbar architecture, is based on the arrangement of arrays of parallel nanowires perpendicular to each other in a crossbar fashion. Such circuits can perform logic or store information at the cross-points [15,16]. It is expected that crossbars will be defined within CMOS circuits [6].…”

Section: Introductionmentioning

confidence: 99%

“…When it comes to the crossbar, different fabrication techniques have been suggested; and the most successful one is based on the nanomold imprint lithography [15]. This technique consists in transferring a pattern of parallel nanowires onto a different substrate.…”

Section: Introductionmentioning

confidence: 99%

Complete nanowire crossbar framework optimized for the multi-spacer patterning technique

Ben-Jamaa

Cerofolini

Leblebici

et al. 2009

Proceedings of the 2009 International Conference on Compilers, Architecture, and Synthesis for Embedded Systems

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Nanowire crossbar circuits are an emerging architectural paradigm that promises a higher integration density and an improved fault-tolerance due to its reconfigurability. In this paper, we propose for the first time the utilization of the multi-spacer patterning technique to fabricate nanowire crossbars with a high cross-point density up to 10 10 cm −2 . We propose a novel decoder fabrication method that can be included in a process dedicated to the multi-spacer patterning technique. We address the technology problems consisting in the variability and fabrication complexity at the design level by optimizing the encoding scheme. We show an overall reduction of the variability by 18% and a cancelation of the fabrication complexity overhead.

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“…One of the several post-silicon devices is a cross-bar memory device based on molecular devices fabricated by nanoimprint lithography, which has achieved the production of 30-nm half-pitch patterning [3,4]. However, today's production procedures such as nanoimprint lithography, and optical lithography, and electron-beam lithography, do not allow for the resolution to achieve sub-20-nm line-width structures.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Investigation of New Quantum-Cross-Structure Device as a Candidate beyond CMOS

Kondo¹,

Kaiju²,

Ishibashi³

2008

MRS Proc.

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We propose a new quantum cross structure (QCS) device as a candidate beyond CMOS. The QCS consists of two metal nano-ribbons having edge-to-edge configuration like crossed fins.The QCS has potential application in both switching devices and high-density memories by sandwiching a few molecules and atoms. The QCS can also have electrodes with different dimensional electron systems because we can change the widths, the lengths, and the heights of two metal nano-ribbons, respectively. Changing the dimensions of electron systems in both electrodes, we have calculated the current-voltage characteristics depending on the coupling constants between a molecule and the electrode. We find that the conductance peak is much sharper in case of weak coupling regardless of dimensions of electron systems in electrodes, compared to strong coupling case. We also find that the conductance peak of QCS having electrodes with two-dimensional electron systems (2DES) is much sharper than that of QCS having electrodes with three-dimensional electron systems (3DES) in case of strong coupling because of quantum size effect of 2DES. These results imply that the QCS with the very sharp conductance peak can serve as the devices to switch on and off by very small voltage change.

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One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography

Cited by 124 publications

References 10 publications

Lithography-Free Nanostructure Fabrication Techniques Utilizing Thin-Film Edges

Lithography-Free Nanostructure Fabrication Techniques Utilizing Thin-Film Edges

Complete nanowire crossbar framework optimized for the multi-spacer patterning technique

Theoretical Investigation of New Quantum-Cross-Structure Device as a Candidate beyond CMOS

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