2017
DOI: 10.1021/acs.nanolett.7b01717
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One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport

Abstract: Experimental demonstrations of one-dimensional (1D) van der Waals material tellurium (Te) have been presented by Raman spectroscopy under strain and magneto-transport. Raman spectroscopy measurements have been performed under strains along different principle axes. Pronounced strain response along the c-axis is observed due to the strong intrachain covalent bonds, while no strain response is obtained along the a-axis due to the weak interchain van der Waals interaction. Magneto-transport results further verify… Show more

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Cited by 289 publications
(222 citation statements)
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“…We obtained indirect characterization of the strain state of this and three similar curved Te nanowires from the same growth using Raman spectroscopy (Figure 5a). As expected, both uniaxial strain and hydrostatic pressure have been shown previously to significantly shift the position of Raman active modes in Te [35,52]. Focusing on the most intense mode in the Raman spectrum of Te, the A1 breathing mode, we find that straight Te nanowires display strongly uniform peak positions and widths (Figure 5b), while curved nanowires on average have broader peaks and significant shifts up and down in frequency, relative to straight wires.…”
Section: Strain Engineering Of Te Nanowiressupporting
confidence: 83%
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“…We obtained indirect characterization of the strain state of this and three similar curved Te nanowires from the same growth using Raman spectroscopy (Figure 5a). As expected, both uniaxial strain and hydrostatic pressure have been shown previously to significantly shift the position of Raman active modes in Te [35,52]. Focusing on the most intense mode in the Raman spectrum of Te, the A1 breathing mode, we find that straight Te nanowires display strongly uniform peak positions and widths (Figure 5b), while curved nanowires on average have broader peaks and significant shifts up and down in frequency, relative to straight wires.…”
Section: Strain Engineering Of Te Nanowiressupporting
confidence: 83%
“…To estimate the significance of frequency shifts of approximately 0.5 cm -1 , we note that hydrostatic pressure of 4 GPa shifts the A1 mode of Te lower by about 10 cm -1 [52], while the same mode shifts lower with c-axis uniaxial strain of 1% by 1 cm -1 [35]. Thus, the shifts observed in our experiment might correspond to equivalent pressures of approximately 0.2 GPa or strains of 0.5%.…”
Section: Strain Engineering Of Te Nanowiresmentioning
confidence: 62%
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“…Two-dimensional (2D) materials, such as graphene, MoS 2 , black phosphorus and hexagonal boron nitride, show great promise for many applications, including electronics, optoelectronics, energy conversion, and energy storage 1 . Recently, few-layer Te joins the family of 2D materials [2][3][4][5][6][7] . It exhibits air-stable transistor performance comparable or superior to other 2D materials 7 , making Te attractive for nanoelectronics.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, it has been assumed that the interaction along the chain is strong and covalent, while between the chains is weak. Some papers claim that the inter-chain interaction is van der Waals (vdW) type 5,8,[11][12][13][14][15][16][17] . In anisotropic materials, the transport along weak interaction direction is usually much slower than that along chemical bond directions.…”
Section: Introductionmentioning
confidence: 99%