On “Weed Research” Vol. 42, Nos. 4, 5 and 6

Investigation on the formation process of single-crystalline GaOxbarrier in Fe/GaOx/MgO/Fe magnetic tunnel junctions

“…where the GaO x is a tunnel barrier in the MTJs and is known to be one of the emerging semiconductor materials for practical applications [7,8]. The observed tunneling magnetoresistance (MR) ratio (92%) at room temperature (RT) is the highest value reported for MTJs with semiconducting tunnel barrier and practical 3d ferromagnetic electrodes [9][10][11][12][13][14][15][16][17]. Such a high MR evidently indicates the spin-polarized coherent tunneling [18][19][20][21] as observed in MTJs with MgO [22][23][24], MgAl 2 O 4 [25] and MgGa 2 O 4 [26] tunnel barriers.…”