On Threshold Selection Using Fuzzy Risk Criterion

Fang, Ning; Cheng, Ming-Chieh

doi:10.1143/jjap.31.1382

Cited by 4 publications

(3 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is well known that the driving force of grain growth can be induced by the elimination of grain boundary area and the increase of energy of the grain boundary 16. Thus, the occurrence of liquid phase sintering behaviour reduces the area and energy of grain boundary, and leads to the retardation of grain growth in the ceramics 17…”

Section: Resultsmentioning

confidence: 99%

Microstructures and electrical properties of Ba_1–xBi_xFe_0·9Sn_0·1O₃thermistor ceramics

Yuan

Luo²,

Zhou

et al. 2013

Advances in Applied Ceramics

View full text Add to dashboard Cite

The polycrystalline Ba 1-x Bi x Fe 0?9 Sn 0?1 O 3 (x50?1, 0?2, 0?3, 0?4 and 0?5) ceramics were prepared using a solid state reaction process, and the effect of Bi substitution on the microstructures and the electrical properties is investigated. The as sintered Ba 1-x Bi x Fe 0?9 Sn 0?1 O 3 ceramics showed the cubic perovskite structure with small amount of spinel BaFe 2 O 4 and some residual Fe 2 O 3 . As the Bi concentration increased, the ceramic grain size decreased and the pores or holes were reduced for the ceramics. The values of room temperature resistivity, thermistor constant and activation energy of the Ba 1-x Bi x Fe 0?9 Sn 0?1 O 3 thermistor ceramics, increasing with the rise of Bi content, were in the range of 1-1290 kV cm, 4469-7328 K and 0?385-0?632 eV respectively. The electrical properties of Ba 1-x Bi x Fe 0?9 Sn 0?1 O 3 thermistor ceramics are mainly attributed to the contribution of grains, grain shells and grain boundaries by the impedance analysis.

show abstract

Section: Resultsmentioning

confidence: 99%

Microstructures and electrical properties of Ba_1–xBi_xFe_0·9Sn_0·1O₃thermistor ceramics

Yuan

Luo²,

Zhou

et al. 2013

Advances in Applied Ceramics

View full text Add to dashboard Cite

show abstract

“…The addition of MnO 2 increased the grain-boundary potential barrier, and enhanced the PTC effect, due to the segregation of Mn at the grainboundary regions to introduce the surface acceptor states [12]. The additives Al 2 O 3 , SiO 2 , TiO 2 and BN were applied as the sintering aids to lower the sintering temperature [11,13].…”

Section: Resultsmentioning

confidence: 99%

Experimental determination of intrinsic parameters in double-donor-doped (Ba_0.92Sr_0.08)TiO₃-based positive temperature coefficient ceramics

et al. 2004

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

In the present work, double-donor-doped (Ba 0.92 Sr 0.08 )TiO 3 -based positive temperature coefficient (PTC) ceramics were fabricated for potential application in an over-current protector. The electrical properties of the materials were also characterized. Using the experimental results obtained, theoretical models on electrical properties were studied, and the intrinsic parameters were determined. The relationship between the intrinsic parameters, the materials variables and the electrical properties was discussed. It was noted that the addition of double donors Y 2 O 3 + Nb 2 O 5 could result in relatively low room-temperature resistivity, in particular, 30 cm at the sintering temperature of 1230 • C. Within the investigated working temperature range, the grain-boundary potential barrier at a fixed measuring temperature decreased with increasing sample sintering temperature. The evaluated effective donor concentration and surface acceptor state density were in good agreement with the reported values in the literature. A parameter was introduced based on these two variables to represent the resistivity jump. The depletion layer thickness was determined to be in the submicron range. The present work is believed to be the first report to determine, based on the experimental data, all the essential intrinsic parameters for double-donor-doped PTC ceramics.

show abstract

“…Since, for manufacturing BaTiO 3 -based electronic components, the sintering temperature is too high, various additives are thought to decrease the sintering temperature without undue degradation of the electrical characteristics. In general, small amounts of sintering aids such as TiO 2 , SiO 2 , and Al 2 O 3 have usually been added to BaTiO 3 ceramics to achieve homogeneous microstructure and to lower the sintering temperature during liquid-phase sintering [4][5][6]. Moreover, it is customary that donor dope with either a trivalent (e.g., Y, La, or Sb) or a pentavalent element (e.g., Nb or Ta) are used make BaTiO 3 ceramic semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Microwave Sintering BaTiO<sub>3</sub> Ceramics Using Liquid Phase Sintering

Nishimura

Yasuoka

Nagaoka

et al. 2006

KEM

View full text Add to dashboard Cite

Microwave sintering is a process in which target materials absorb microwaves and heat themselves from the inside. When microwave energy is effectively absorbed by the material, energy consumption for the sintering can be reduced. Our study is focused on the microwave sintering of BaTiO3 to more rapidly obtain dense ceramics with specific characteristics. For BaTiO3-based electronic components, the sintering temperature is too high for manufacture, so various additives are used to decrease the sintering temperature without undue worsening of the electrical characteristics. In this work, during microwave sintering, BaCO3, H3BO3, BaB2O4 and LiF were added to form a liquid. The effects of the amount of liquid phase on density and dielectric properties were investigated. BaTiO3 sintered with BaCO3 and H3BO3 showed dielectric properties, whereas BaTiO3 sintered with BaB2O4 had semiconducting properties with PTCR characteristics. Also, LiF-added BaTiO3 indicated a dielectric constant in which the peak shifts to lower temperatures with higher LiF concentrations.

show abstract

On Threshold Selection Using Fuzzy Risk Criterion

Cited by 4 publications

References 21 publications

Microstructures and electrical properties of Ba_1–xBi_xFe_0·9Sn_0·1O₃thermistor ceramics

Microstructures and electrical properties of Ba_1–xBi_xFe_0·9Sn_0·1O₃thermistor ceramics

Experimental determination of intrinsic parameters in double-donor-doped (Ba_0.92Sr_0.08)TiO₃-based positive temperature coefficient ceramics

Microwave Sintering BaTiO<sub>3</sub> Ceramics Using Liquid Phase Sintering

Contact Info

Product

Resources

About

On Threshold Selection Using Fuzzy Risk Criterion

Cited by 4 publications

References 21 publications

Microstructures and electrical properties of Ba1–xBixFe0·9Sn0·1O3thermistor ceramics

Microstructures and electrical properties of Ba1–xBixFe0·9Sn0·1O3thermistor ceramics

Experimental determination of intrinsic parameters in double-donor-doped (Ba0.92Sr0.08)TiO3-based positive temperature coefficient ceramics

Microwave Sintering BaTiO<sub>3</sub> Ceramics Using Liquid Phase Sintering

Contact Info

Product

Resources

About

Microstructures and electrical properties of Ba_1–xBi_xFe_0·9Sn_0·1O₃thermistor ceramics

Microstructures and electrical properties of Ba_1–xBi_xFe_0·9Sn_0·1O₃thermistor ceramics

Experimental determination of intrinsic parameters in double-donor-doped (Ba_0.92Sr_0.08)TiO₃-based positive temperature coefficient ceramics