On the use of AsH3 in the molecular beam epitaxial growth of GaAs

Calawa, A. R.

doi:10.1063/1.92484

Cited by 176 publications

(16 citation statements)

References 6 publications

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“…Excellent uniform growth with very low variations of the layer thickness and doping concentration with silicon are realized under the optimized spatial configuration. Doping for GaAs/AlGaAs using the gas dopant, such as SiI 4 17,18 for n type and CBr 4 19 for p type, show the better performance than that by Be and Si. AlAs mole fractions of AlGaAs ͑/ Ave.͒, which is evaluated by the PL method as shown in the mapping data of Figs.…”

Section: B Uniformity and Reproductivitymentioning

confidence: 91%

“…Figure 4 summarizes the data compared with other reported data, 4,[8][9][10][11][12] strictly taking into account the surface depletion layer. Undoped GaAs grown in arsenic cracked atmosphere gave n-type conductivity with a background concentration of less than 1ϫ10 15 cm Ϫ3 , showing strong dependence on AsH 3 supplying condition.…”

Section: Background Level In Gaasmentioning

confidence: 97%

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Multiwafer gas source molecular beam epitaxial system for production technology

Izumi

Kouji

Hayafuji

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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High throughput epitaxial wafer production is demonstrated by using a newly designed multiwafer gas source molecular beam epitaxy apparatus. The actual application data show excellent results of uniformity, cost performance, and material performance through practical mass production operation. Electron mobility as high as 124 000 cm2/V s is obtained at 77 K for a 7-μm-thick GaAs layer with a carrier concentration of 7.7×1013 cm−3. A typical surface defect density of 25 cm−2 is achieved for continuously grown 1.7-μm-thick metal–semiconductor field effect transistor (MESFET) structures. The uniformity of sheet resistance in n-GaAs and AlAs mole fractions in AlGaAs is less than 2.0% (1.5% and 0.27%, respectively) over a 27 cm diameter area. A quantitative throughput number for a typical growth of a MESFET structure is four 4 in. or seven 3 in. diameter wafers per 2.5 h in a continuous process flow.

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Section: B Uniformity and Reproductivitymentioning

confidence: 91%

Section: Background Level In Gaasmentioning

confidence: 97%

Multiwafer gas source molecular beam epitaxial system for production technology

Izumi

Kouji

Hayafuji

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Two related techniques based on gas sources appeared to offer advantages over solid sources; gas source MBE (GSMBE) replaced elemental As and P with arsine and phosphine [25,26], while metalorganic MBE (MOMBE) [27][28][29], also known as chemical beam epitaxy (CBE), used organo-metallic sources for the Group III elements, i.e. it was effectively a hybridization of MBE with metalorganic vapour phase epitaxy (MOVPE).…”

Section: Article In Pressmentioning

confidence: 99%

Basic studies of molecular beam epitaxy—past, present and some future directions

Joyce

2004

Journal of Crystal Growth

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“…Therefore precracking is required. While a number of methods have been employed [90,[128][129][130][131], the low-pressure-catalytic-cracking scheme is the most commonly used method because of its ability to switch gases and flows rapidly. As shown in Fig.…”

Section: 2 1 the Influence Of Hydrogen On Carbon Incorporationmentioning

confidence: 99%

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Abernathy

Hobson

1996

J Mater Sci: Mater Electron

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This paper is a review of the incorporation and behaviour of carbon in group III-V materials. Both vapour phase epitaxy and growth in ultra high-vacuum environments are covered. Particular attention is given to the factors which influence the carbon-uptake rate such as the growth temperature, ratio of group V to group III materials and parasitic interaction with other species at the growth front. Among the latter, the role of hydrogen is crucial not only to the understanding of the incorporation of carbon but also to its behaviour in the lattice. Consequently, this issue is thoroughly discussed for both growth methods. Potential sources for the introduction of carbon to the growth front are also compared in the light of their utility for obtaining high well-confined acceptor Profiles, such as are required in the latest-generation electronic and photonic devices. Finally, the material quality and dopant stability which can be obtained with carbon-doped materials will be briefly reviewed and, where possible, contrasted with that which can be obtained with other p-type dopants.

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On the use of AsH3 in the molecular beam epitaxial growth of GaAs

Cited by 176 publications

References 6 publications

Multiwafer gas source molecular beam epitaxial system for production technology

Multiwafer gas source molecular beam epitaxial system for production technology

Basic studies of molecular beam epitaxy—past, present and some future directions

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

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