On the triggering properties of high power SI-GaAs photoconductive switch

Shi, Wei; Li, Qi; Er-Zhu, Chen; Zhao, Wei; Sun, Xiaowei; Loy, Lam Yee

doi:10.1109/icpadm.2000.876403

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“…A number of experimental investigations have been performed to characterize the electrical and optical properties of high-gain PCSS's [1,2]. In this paper we use the model of luminous charge domain to analyze the periodicity and weakening surge of GaAs PCSS's.…”

Section: Introductionmentioning

confidence: 99%

Mechanism Analysis of Periodicity and Weakening Surge of GaAs Photoconductive Semiconductor Switches

Tian

Wang

Shi

2006

2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics

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The periodicity and weakening surge of GaAs Photoconductive Semiconductor Switches is analyzed. We think periodicity and weakening surge of the output current waveform is caused by self-excitation of the circuit. The electric field threshold and maintenance field of Gunn threshold electric field are modulated by the AC electric field; the output waveform became two main modes of trans-electron oscillator, namely delay dipole domain mode and quenched dipole domain mode.

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Section: Introductionmentioning

confidence: 99%