On the transformation of the potential barrier at a GaAs/Au interface during heat treatment

Bednyi, B. I.

doi:10.1134/1.1187853

Cited by 3 publications

(4 citation statements)

References 9 publications

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“…When the built-in electric field is constant, saturation of the photovoltage amplitude at high excitation level will appear, and a logarithmic dependence between the photovoltage amplitude and excitation level will be obtained. Bednyi and Baidus [34] have reported a logarithmic relationship between the PV response and excitation intensity, when the PICCs are separated under a built-in electric field:…”

Section: Resultsmentioning

confidence: 99%

A study of the dynamic properties of photo-induced charge carriers at nanoporous TiO₂/conductive substrate interfaces by the transient photovoltage technique

Wei

Xie

et al. 2008

Nanotechnology

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Two interfaces with opposite orientations of the built-in electric field, nanoporous TiO(2) film/ FTO electrode and nanoporous TiO(2) film/semitransparent Pt substrate, were constructed. The separation and transport of photo-induced charge carriers in the two systems of nanoporous TiO(2)/conductive substrate were studied by the transient photovoltage technique. Various transient photovoltage responses were obtained when the laser beam was incident from the surface of the nanoporous TiO(2) film (top illumination) or the TiO(2)/substrate interface (bottom illumination). A linear and a logarithmic dependence of the photovoltage amplitude on the excitation level were observed for top illumination and bottom illumination, respectively. The results indicate that diffusion is the major way for the separation of charge carriers in the nanoporous TiO(2) film and that the excess carriers were separated by drift under the built-in electric field at the TiO(2)/substrate interfaces.

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Section: Resultsmentioning

confidence: 99%

A study of the dynamic properties of photo-induced charge carriers at nanoporous TiO₂/conductive substrate interfaces by the transient photovoltage technique

Wei

Xie

et al. 2008

Nanotechnology

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“…Appearance of a doped transition layer in semiconductor crystal at metal-semiconductor contact formation may change (and impair) the electrophysical parameters of various device structures. Such layers have been observed, for instance, in model samples of TiB 2 -GaAs and Au-TiB 2 -GaAs [1] and Au-GaAs [2] Schottky contacts.…”

Section: Introductionmentioning

confidence: 79%

“…Presence of a doped transition layer in GaAs has been established using different experimental techniques [1,2,5,6]. In particular, the results of measurements of spectral curves for transverse photovoltage in the TiB 2 -GaAs and Au-TiB 2 -GaAs Schottky contact samples indicated at formation of such layer [1].…”

Section: Resultsmentioning

confidence: 99%

On a doped transition layer in the space charge region of Schottky contact

Shekhovtsov¹

2002

Semicond. Phys. Quantum Electron. Optoelectron.

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A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium arsenide crystal with starting impurity concentration of 10 16 cm 3 , a layer with doping level of 10 17 cm 3 and maximal thickness of 4 nm may exist in the space-charge region near the interface of the TiB 2-GaAs structure. At impurity concentration in the transition layer about and over 10 18 cm 3 , its thickness goes down, and it shows up as individual inclusions in the GaAs lattice. The total area of such inclusions at the metal-semiconductor interface does not exceed 1 % that of contact. In actual structures the transition layer is a superposition of layers and inclusions, with impurity concentration of 10 17 cm 3 or more and thickness below 4 nm.

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“…(Ilchuk et al, 2000;Mergui et al, 1992;Bedny, 1999). The barrier modification is caused by the fact that, under thermal annealing, the morphology and the chemical composition of the region directly under the contact changes.…”

Section: Introductionmentioning

confidence: 99%

The comprehensive evaluation of the structural and functional properties of the gas- statically treated Au–CdZnTe–Au structures for X- and gamma-ray detectors

Nasieka

Strelchuk

Boyko

et al. 2015

Radiation Physics and Chemistry

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On the transformation of the potential barrier at a GaAs/Au interface during heat treatment

Cited by 3 publications

References 9 publications

A study of the dynamic properties of photo-induced charge carriers at nanoporous TiO₂/conductive substrate interfaces by the transient photovoltage technique

A study of the dynamic properties of photo-induced charge carriers at nanoporous TiO₂/conductive substrate interfaces by the transient photovoltage technique

On a doped transition layer in the space charge region of Schottky contact

The comprehensive evaluation of the structural and functional properties of the gas- statically treated Au–CdZnTe–Au structures for X- and gamma-ray detectors

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On the transformation of the potential barrier at a GaAs/Au interface during heat treatment

Cited by 3 publications

References 9 publications

A study of the dynamic properties of photo-induced charge carriers at nanoporous TiO2/conductive substrate interfaces by the transient photovoltage technique

A study of the dynamic properties of photo-induced charge carriers at nanoporous TiO2/conductive substrate interfaces by the transient photovoltage technique

On a doped transition layer in the space charge region of Schottky contact

The comprehensive evaluation of the structural and functional properties of the gas- statically treated Au–CdZnTe–Au structures for X- and gamma-ray detectors

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A study of the dynamic properties of photo-induced charge carriers at nanoporous TiO₂/conductive substrate interfaces by the transient photovoltage technique

A study of the dynamic properties of photo-induced charge carriers at nanoporous TiO₂/conductive substrate interfaces by the transient photovoltage technique