On the thickness periodicity of atomic-resolution images of dislocation cores

The structure of Ba x Ti8−2x Ga10+2x O31

“…Note that the contrast near the crystal edge does not reappear in thicker regions. This behaviour is in marked distinction to the thickness periodicity observed for images of Si (or Ge) and H-Nb205 observed by Spence, O'Keefe & Iijima (1978). Fig.…”

Lattice imaging of faulted dipoles in silicon

“…A similar analysis of end-on lattice images of 60' dislocations in silicon has shown that useful structure images revealing the core structure can be obtained within the second Pendellosung thickness period of a wedge crystal in the zone axis orientation, thus extending the useful range of thickness for lattice imaging (Spence, O'Keefe and Iijima 1978). This technique has been used here.…”

Minimum detectable solute concentration in atomic-resolution transmission electron microscopy

“…Atomicresolution capability is particularly important in the field of materials science, where it is often necessary to understand the atomic structure and composition of a material in order to explain its properties. While many researchers have investigated the possibilities and limitations of structural information that is available by ARM (Spence, O'Keefe & Iijima, 1978;Saxton & Smith, 1985;Self, Glaisher & Spargo, 1985), the compositional information that is contained in atomic-resolution images is just beginning to be systematically examined (Rose & Gronsky, 1986;Ourmazd, Rentschler & Taylor, 1986 Gronsky, 1987;Tanaka & Cowley, 1987). The ability to determine the solute concentration in individual columns of atoms has many important applications in materials science, such as allowing determination of the extent of solute segregation to dislocations, grain and interphase boundaries, permitting characterization of long-range order in small metastable strengthening precipitates, and determining the extent of interdiffusion and abruptness of interfaces in multilayered structures.…”