On the Thermal Evolution of Photoconductivity in Bulk Fe-Doped Semi-Insulating InP

Jiménez, J.; Rebollo, Miguel Ángel González; Carbayo, V.; Bonnafe, J.

doi:10.1002/pssa.2210770166

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1996

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Cited by 7 publications

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“…Photocurrent is quite a sensitive technique that allows us to obtain information about defect levels. The existence of several photocurrent thresholds related to different iron transitions in InP has been already reported [7][8][9]. Since photocurrent is a highly sensitive technique, high contrast is expected when spatially resolved measurements are achieved, allowing a highly contrasted map of the distribution of electrically active iron to be obtained.…”

Section: Introductionmentioning

confidence: 91%

Photocurrent contrast in semi-insulating Fe-doped InP

Alvarez¹,

Avella²,

Jiménez³

et al. 1996

Semicond. Sci. Technol.

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The relation between photocurrent and iron distribution in as-grown bulk InP is studied on the basis of a theoretical model that considers the electronic transitions involving Fe 2+ ( 5 E) and Fe 3+ electronic levels. The photocurrent contrast is thus analysed in terms of fluctuations in [Fe 2+ ] and [Fe 3+ ]. When studying the homogeneity of Fe-doped semi-insulating InP wafers by means of scanning extrinsic photocurrent microscopy, it is seen that inhomogeneity is mainly controlled by fluctuations of the neutral iron concentration [Fe 3+ ].

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Section: Introductionmentioning

confidence: 91%