On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs

Rescher, Gerald; Pobegen, Gregor; Aichinger, Thomas

doi:10.1109/iedm.2016.7838392

Cited by 53 publications

(27 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…It has been observed that the drain leakage current SiC MOSFETs depends on the OFF-state voltage applied on the gate [1,3]. When a negative gate bias is applied for a short time in the OFF-state, the drain current leakage is enhanced for as long as the applied bias is kept under the threshold voltage.…”

Section: A What Is the Vth Subthreshold Hysteresis?mentioning

confidence: 99%

“…The reason behind this behaviour has been attributed mainly to hole trapping in the oxide near the interface [3][4][5][6][7]. The relatively fast hole traps are filled when a negative bias is applied to the gate.…”

Section: Downmentioning

confidence: 99%

“…In literature, it is stated that the V TH subthreshold hysteresis is erased for gate biases beyond the V TH [1,3,4], but it seems that it is the case only for static measurements, where the equilibrium is achieved. Almost Short Circuit tests, with gate bias just above the threshold voltage, show that hysteresis is still present and has a great impact on the device performance [10].…”

Section: B Short Circuit Operationmentioning

confidence: 99%

See 2 more Smart Citations

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Asllani¹,

Morel²,

Planson³

et al. 2018

2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles &Amp; Interna

View full text Add to dashboard Cite

TH subthreshold hysteresis is an aspect of MOSFET's threshold instabilities that is gaining interests in last few years. As a matter of fact, reliability concerns are raised due to the fluctuation of the threshold voltage depending on the previous bias state. The subthreshold drain current, also called drain leakage current, is enhanced after a negative gate bias is applied to put the device in OFF-state. This phenomenon affects the static characteristics and might also change the dynamic behaviour of the devices, but such measurements have not yet been reported. This study reports the impact of the Hysteresis on the Short Circuit behaviour of a commercially available SiC MOSFET. A physical interpretation of the measurement is given in order to provide the fundamentals necessary for the evaluation of the reliability of these power devices.

show abstract

Section: A What Is the Vth Subthreshold Hysteresis?mentioning

confidence: 99%

Section: Downmentioning

confidence: 99%

Section: B Short Circuit Operationmentioning

confidence: 99%

See 1 more Smart Citation

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Asllani¹,

Morel²,

Planson³

et al. 2018

2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles &Amp; Interna

View full text Add to dashboard Cite

show abstract

“…Nevertheless, some concerns persist since standard tests have been designed for Si technology and may not explore all of the reliability issues that exist in SiC devices. In particular, recent research has gained interest on threshold voltage instability of SiC MOSFETs [1][2][3][4][5][6][7]. It is important to clarify the different types of instability, their origin and of course their impact on long term reliability.…”

Section: Introductionmentioning

confidence: 99%

V subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Asllani

Fayyaz

Castellazzi

et al. 2018

Microelectronics Reliability

View full text Add to dashboard Cite

V TH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude reducing as the temperature increases, whereas all trench devices from different manufacturers exhibit the opposite behaviour. A physical interpretation is proposed, based on experimental evidence, which demonstrates that temperature dependence of the V TH subthreshold hysteresis is related to the technology. The findings are relevant to the ongoing discussion on SiC bespoke validation standards development and contribute important new insight.

show abstract

“…The effect of VTH-hysteresis in modern SiC power MOSFETs has been highlighted and interpreted in [7]. The effect mainly interests sub-threshold bias operational conditions, although some investigations have shown that even above threshold operation can show memory of the preceding bias condition, exactly as a result of the hysteresis of VTH [8], [9].…”

mentioning

confidence: 99%

V_TH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Asllani

Castellazzi

Aviñó-Salvadó

et al. 2019

2019 IEEE International Reliability Physics Symposium (IRPS)

View full text Add to dashboard Cite

This paper contributes to investigations on the threshold-voltage (VTH) hysteresis in SiC power MOSFETs. Such effect is of relevance mainly for sub-threshold operation of the devices, but needs to be told apart from stress-related VTHdrift phenomena for technology maturity and reliability validation goals. Important differences exist in commercially available devices, particularly in relation to their gate technology, planar or trench, the latter also showing a marked temperature dependence of the hysteretic range. Based on the experimental characterization of the interface capacitance and charge, this paper puts forward a methodology for determining the types of traps affecting the various devices, with the aim of contributing a tool to assist driving of technological maturity in future generation devices. This paper also shows the potential of capacitance hysteresis measurement to the estimation of the distribution of interface.

show abstract

On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs

Cited by 53 publications

References 11 publications

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

V subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

V_TH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Contact Info

Product

Resources

About

On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs

Cited by 53 publications

References 11 publications

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

V subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Contact Info

Product

Resources

About

V_TH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate