On the structural, morphological, optical and electrical properties of sol–gel deposited ZnO:In films

Gîrtan, Mihaela; Socol, Marcela; Pattier, Bruno; Sylla, Marame Diamb; Stănculescu, Anca

doi:10.1016/j.tsf.2010.07.006

Cited by 52 publications

(16 citation statements)

References 31 publications

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“…A decrease in the RMS value was observed with the increase in the In content between L and R points. This observation is in agreement with other results presented in the literature [74].…”

Section: Nanoscaled Films and Layers 62supporting

confidence: 94%

Laser Prepared Thin Films for Optoelectronic Applications

Socol¹,

Socol²,

Preda³

et al. 2017

Nanoscaled Films and Layers

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Laser techniques such as pulsed laser deposition, combinatorial pulsed laser deposition, and matrix-assisted pulsed laser evaporation were used to deposit thin films for optoelectronic applications. High-quality transparent conductor oxide films ITO, AZO, and IZO were deposited on polyethylene terephthalate by PLD, an important experimental parameter being the target-substrate distance. The TCO films present a high transparency (>95%) and a reduced electrical resistivity (5 × 10 −4 Ωcm) characteristics very useful for their integration in the flexible electronics. In x Zn 1−x O films with a compositional library were obtained by CPLD. These films are featured by a high optical transmission (>95%), the lowest resistivity (8.6 × 10 −4 Ωcm) being observed for an indium content of about 44-49 at.%. Organic heterostructures based on arylenevinylene oligomers (P78 and P13) or arylene polymers (AMC16 and AMC22) were obtained by MAPLE. In the case of ITO/P78/Alq3/Al heterostructures, a higher current value is obtained when the film thickness increases. Also, a photovoltaic effect was observed for heterostructures based on AMC16 or AMC22 deposited on ITO covered by a thin layer of PEDOT:PSS. Due to their optical and electrical properties, such organic heterostructures can be interesting for the organic photovoltaic cells (OPV) applications.

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“…A decrease in the RMS value was observed with the increase in the In content between L and R points. This observation is in agreement with other results presented in the literature [74].…”

Section: Nanoscaled Films and Layers 62supporting

confidence: 94%

Laser Prepared Thin Films for Optoelectronic Applications

Socol¹,

Socol²,

Preda³

et al. 2017

Nanoscaled Films and Layers

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show abstract

“…C-V measurements were performed using an Agilent 4294A impedance analyzer. [26]. This result indicates that IZO nanopowder has a polycrystalline hexagonal wurtzite structure.…”

Section: Methodsmentioning

confidence: 72%

Structural and electrical characterizations of ZnO:In/PS/Si heterojunction deposited by rf-magnetron sputtering

et al. 2015

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Indium doped zinc oxide (IZO) thin film has been deposited on p-type porous silicon (PS) substrate by rf-magnetron sputtering of IZO aerogel nanoparticles at room temperature to obtain n-IZO/PS/p-Si heterojunction diode. The obtained IZO film, with a thickness of about 400 nm using indium concentration of 4 at.%, was polycrystalline with a hexagonal wurtzite structure and preferentially orientation in the (002) crystallographic direction. Atomic force microscopy (AFM) micrograph shows that IZO film has a typical columnar structure and a very smooth surface. The heterojunction parameters were evaluated from the current-voltage (I-V) characteristics carried out in the temperature range 80-300 K and capacitance-voltage (C-V) measurements. The ideality factor and barrier height of the heterojunction exhibited strong temperature dependence. The electrical measurements show that the n-IZO/PS/p-Si heterojunction has a Schottky electronic behavior where the depletion-layer is developed principally in the p-type silicon substrate. The tunneling mechanism via deep-level states was the main conduction process at low forward bias, while space-charge-limited current conduction dominated the carrier transport at higher bias. The I-V characteristics under illumination show that the p-n junction exhibits a photovoltaic behavior and is promising for photovoltaic application.

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“…C-V measurement was performed using an Agilent 4294A impedance analyzer. [29]. This result indicates that ZnO:In nanopowder has a polycrystalline hexagonal wurtzite structure.…”

Section: Methodsmentioning

confidence: 73%

Fabrication and electrical properties of Si/PS/ZnO:In solar cell deposited by rf-magnetron sputtering based on nanopowder target material

Belaid

Nouiri

Ayadi

et al. 2015

J Mater Sci: Mater Electron

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Indium doped zinc oxide (IZO) nanopowder synthesized by sol-gel method has been grown onto p type porous silicon substrate by rf-magnetron sputtering at room temperature. The obtained IZO thin films with a thickness of about 400 nm using indium concentration of 4 at%, were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. Atomic force microscopy and scanning electron microscopy were used to study the films morphology. The obtained IZO films, generally used as TCO in solar cells, have a typical columnar structure and very smooth surface. From electrical characterizations: current-voltage (I-V) on dark and under illumination and capacity-voltage (C-V) at different frequency measurements, we can conclude that we have Schottky electronic behaviors where the depletion-layer is developed principally in p-type silicon region. The grown structure is promising for photovoltaic application.

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On the structural, morphological, optical and electrical properties of sol–gel deposited ZnO:In films

Cited by 52 publications

References 31 publications

Laser Prepared Thin Films for Optoelectronic Applications

Laser Prepared Thin Films for Optoelectronic Applications

Structural and electrical characterizations of ZnO:In/PS/Si heterojunction deposited by rf-magnetron sputtering

Fabrication and electrical properties of Si/PS/ZnO:In solar cell deposited by rf-magnetron sputtering based on nanopowder target material

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