On the structural features of doped amorphous chalcogenide semiconductors

Bhatia, K.L.; Gosain, D. P.; Parthasarathy, G.; Gopal, E. S. R.

doi:10.1016/0022-3093(86)90475-8

Cited by 24 publications

(4 citation statements)

References 11 publications

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“…Phillips proposed a model for the microscopic structure of Bi-modified GexB1-x (B = S, Se or Te) glass as Bi2B3 clusters with a tetradymite-like structure embedded in a GexB1-x matrix [24]. This was based on differential thermal analysis (DTA) [25] and penetration probe [26] measurements which indicated a phase separation in the Bi-modified glasses. A.C. measurements indicate that these clusters may have n-type defects situated at excess S − atoms on cluster surfaces; these defects may be taking part in a single-polaron hopping process [27].…”

Section: Introductionmentioning

confidence: 99%

Optical and electronic properties of bismuth-implanted glasses

et al. 2014

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Photoluminescence (PL) and excitation spectra of Bi melt-doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glasses, and BaF2 crystals, all display characteristically different PL spectra to when Bi is incorporated by melt-doping. This indicates that ion implantation is able to generate Bi centers which are not present in samples whose dopants are introduced during melting. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi 2+ and Bi clusters.

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Section: Introductionmentioning

confidence: 99%

Optical and electronic properties of bismuth-implanted glasses

et al. 2014

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“…% were synthetized by using a cost-effective and conventional melt-quench technique, for details see Ref. [12]. Amorphous character of as-prepared samples was previously confirmed by XRD analysis [13].…”

Section: Methodsmentioning

confidence: 99%

“…The activation energy E and frequency factor K 0 are calculated from the slope of functional dependance and presented in Table 2. Higher values of parameters E and K 0 of the glass with the highest Pb content can be interpreted by the fact that Pb as impurity modifies the amorphous matrix structure and affects the increase in the tendency to crystallize [12,13]. The variation of the activation energy with the degree of crystallization can provide useful information about the different mechanisms involved in the transformation process.…”

Section: Table 1 the Onset (T Ons ) And Maximum Temperature Of Crysta...mentioning

confidence: 99%

Study of the crystallization behaviour in arsenic-sulphide glasses doped with Pb

Šiljegović¹,

Skuban²,

Štrbac³

2022

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A kinetic analysis of the crystallization processes in arsenic-sulphide glasses doped with Pb was performed using the DSC method. According to the results of X-ray diffraction measurements of the annealed Pb3(As2S3)97 samples, it was found that the crystallization processes take part through the formation of As2S3, As-S and PbS centers. The dependence of crystallization activation energy on crystallized fraction determined using both Kissinger, Akahira and Sunose (KAS) and Vyazovkin methods, revealed that the first and second crystallization are a single-step processes, while the third one is a complex one. Using the methods of Šatava, Ozawa, and Ozawa-Chen, the occurrence of voluminous 3D crystal growth in investigated samples was found. Glass stability parameters indicated on increase in crystallization affinity with Pb content.

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“…The addition of Bi occurs at the expense of the Se concentration, which enters into (Se) n chains connecting the tetrahedral units and may also cross-link the chain. This cross-linking further strengthens the bond structure [20] and, therefore, accounts for the increase in the glass transition temperature T g with the increase in the Bi content. The Bi-doped chalcogenide glasses show carrier-type reversal from p-to n-type conductivity.…”

Section: Sample Preparation and Experimental Techniquementioning

confidence: 95%

Glass transformation studies in Ge-Se-Bi system

Achamma¹,

Sushama²,

Asokan

et al. 2007

Glass Phys Chem

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The thermal behavior of bulk glasses in the Ge 20 Se 80 -x Bi x ( x = 2.5, 4.0, 6.0 at %) system is studied using modulated differential scanning calorimetry (MDSC). All samples have the same thermal history as a result of heating to a temperature above the glass transition point, equilibrating, and then cooling. The total heat flow, modulated heat flow, reversing heat flow, and nonreversing heat flow under heating and cooling schedules are measured. The glass transition temperature T g , the relaxation enthalpy ∆ H , the specific capacity C p , and the specific heat capacity difference ∆ C p = C pl -C pg , which characterize the thermal events in the glass transition region, are also determined. These parameters reveal an increase with x , which can be attributed to the increase in the average coordination number with an increase in the bismuth content (at %) in the composite. The ratio of heat capacities C pl / C pg , the width of the glass transition temperature range ∆ T g , and the activation enthalpy for glass transition ∆ H Tg are also studied. The values of the ratio C pl / C pg vary in the range between 1.038 and 1.112. The activation energy of crystallization is evaluated using the Kissinger, modified JMA, and Matusita equations, which is found to be in the range of 100.92 kJ/mol.

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On the structural features of doped amorphous chalcogenide semiconductors

Cited by 24 publications

References 11 publications

Optical and electronic properties of bismuth-implanted glasses

Optical and electronic properties of bismuth-implanted glasses

Study of the crystallization behaviour in arsenic-sulphide glasses doped with Pb

Glass transformation studies in Ge-Se-Bi system

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