On the Scattering Processes in Semiconductors

Abstract

The scattering processes in semiconductors are analysed for the purpose of the solution of a non-linear Boltzmann equation. The collision term in the Boltzmann equation is calculated for acoustic modes, and for polar and non-polar optical modes. The differential collision operators are obtained for the isotropic part of the distribution function. The calculations are carried out assuming possible nonparabolicity of the energy band.Die Streuprozesse in Halbleitern werden durch die Losung einer nichtlinearen Boltzmanngleichung analysiert. Der StoRterm in der Boltzmanngleichung wird fur akustische, und fur polare und nicht-polare optischc Moden berechnet. Die differentiellen StoRoperatoren werden fur den isotropcn Anteil der Verteilungsfunktion erhalten. Die Rechnnngen werden unter der Annahme moglicher Nichtparabolizitaten der Energiebiindcr ausgefiihrt.

Magnetic Resonance in Higher Harmonics Generated by Free Carriers in Semiconductors

“…The collision operator C was calculated for different scattering mechanisms and for a non-parabolic band of spherical symmetry in [9]. Introducing the following definition : …”

Free Carrier Electro‐Magneto‐Optical Phenomena in Semiconductors

“…From the physical point of view it means that the momentum scattering is much more effective than the energy scattering. The momentum relaxation time t and the operator C describing the energy scattering were calculated in an earlier paper [2] for different modes of lattice vibration. I f the inequality 8 t << 1 is satisfied the first term in (14) can be neglected and X , can be simplified to * Making use of equations (3), ( 5 ) , (e), (9), and (12), the components of the tensor 6; can be Calculated for different configurations of the magnetic field, electric field E n , and propagation vector N .…”