On the Role of Vacancies in Pore Formation in the Course of Anodizing of Silicon Carbide

Mynbaeva, M. G.

doi:10.1134/1.2045345

Cited by 11 publications

(10 citation statements)

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“…For this series of samples, all parameters were constant except for current density, so this parameter is essential for controlling morphology. The co-existence of the highporosity dendritic and sinuous morphologies has already been shown and explained by the coalescence of vacancies [12]. In this case, as well as for the transition between sinuous and columnar morphologies, we suggest that depletion of the electrolyte with depth of the porous layer or an increase with time of the electrolyte temperature may also play a role, as has already been demonstrated for porous silicon [11,13,14].…”

Section: Characterisationsupporting

confidence: 79%

Structural properties of porous 6H silicon carbide

Newby

Bluet

Aimez

et al. 2010

Phys. Status Solidi C

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In this work we have studied the effect of current density and UV illumination on the morphology of porous SiC formed by electrochemical etching. Raman spectroscopy was also carried out, in order to correlate the porous SiC structure with the obtained spectra. We show that current density is important in controlling the type of structure, whereas UV illumination plays a role in pore nucleation at lower current densities. The shape of the Raman spectra, in particular the longitudinal optical (LO) peak, also depends strongly on the SiC nanoscale morphology. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Characterisationsupporting

confidence: 79%

Structural properties of porous 6H silicon carbide

Newby

Bluet

Aimez

et al. 2010

Phys. Status Solidi C

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“…In porous fabrication, anodic oxidation is a popular method for etching SiC, on account of its extreme chemical stability. Generally, the optical properties of porous SiC are largely determined by the morphological properties of pores [ 18 , 19 ], which are mainly affected by current density, compositions of both the etching solution, and the exposed surface (Si or C) during the anodic oxidation process [ 20 , 21 ]. A non-uniform distribution of porous structures was commonly observed as a consequence of porous depth when the anodic oxidation was conducted under a direct or pulsed constant-current mode [ 15 , 22 ].…”

Section: Introductionmentioning

confidence: 99%

Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation

Yanai

Yamane

et al. 2020

Nanomaterials

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This study investigated the fabrication of porous fluorescent SiC using a constant voltage-controlled anodic oxidation process. The application of a high, constant voltage resulted in a spatial distinction between the porous structures formed inside the fluorescent SiC substrates, due to the different etching rates at the terrace and the large step bunches. Large, dendritic porous structures were formed as the etching process continued and the porous layer thickened. Under the conditions of low hydrofluoric acid (HF) concentration, the uniformity of the dendritic porous structures through the entire porous layer was considerably improved compared with the conditions of high HF concentration. The resulting large uniform structure offered a sizable surface area, and promoted the penetration of atomic layer-deposited (ALD) Al2O3 films (ALD–Al2O3). The emission intensity in the porous fluorescent SiC was confirmed via photoluminescence (PL) measurements to be significantly improved by a factor of 128 after ALD passivation. With surface passivation, there was a clear blueshift in the emission wavelength, owing to the effective suppression of the non-radiative recombination rate in the porous structures. Furthermore, the spatial uniformity of emitted light was examined via PL mapping using three different excitation lasers, which resulted in the observation of uniform and distinctive emissions in the fluorescent SiC bulk and porous areas.

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“…The anodization technique used permits to form porous structure of various types in the bulk of a semiconductor material. 11,13,14 The important feature of the substrates fabricated with this technology is that the porous structure contains a dense outer layer with the thickness of ~20 nm, and pores form their network only below this layer. The thickness of the porous layers formed in the substrates was 5 to 20 mm.…”

Section: Methodsmentioning

confidence: 99%