On the role of defect charge state in the stability of point defects in silicon

Kimerling, Lionel C.; Deangelis, H. M.; Diebold, J. W.

doi:10.1016/0038-1098(75)90818-2

Cited by 110 publications

(46 citation statements)

References 10 publications

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“…Table I. DLTS data of A-center concentrations for n-damaged CZ and FZ silicon detectors q5 n = 5.0 x 1011n/cm 2 Physical parameters of the A-center, E-center and double vacancy (V-V) centers in different charge states for a medium resistivity FZ silicon detector are shown in Table II. These results essentially agree with other measurements of these defects [9,10,11,12,13]. Table II.…”

Section: Suivimarysupporting

confidence: 92%

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Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

Kraner

Verbitskaya

et al. 1992

IEEE Trans. Nucl. Sci.

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Section: Suivimarysupporting

confidence: 92%

“…),-ray [9][10] and neutrons [11][12]. Some DLTS and thermally stimulated current (TSC) work on high resistivity silicon detectors has been reported [13][14], but does not deal with the profile of A-centers versus depth into the detector or the effects of processing thereon.…”

Section: Suivimarymentioning

confidence: 99%

Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

Kraner

Verbitskaya

et al. 1992

IEEE Trans. Nucl. Sci.

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“…36 -39 Even if it is difficult to directly resolve the contributions of these additional defects by means of conventional DLTS their thermal stability is less than that of V 2 . 17,35 Both VP and C i P s disappear rapidly at 150°C and as shown in Fig. 1, the amplitude of the E C Ϫ0.42 eV peak decreases by ϳ10% after 30 min, consistent with the magnitude expected for these centers in moderately doped (͓ P s ͔ϳ10 15 cm Ϫ3 ) CZ samples.…”

supporting

confidence: 80%

“…It is well established that the E C Ϫ0.42 eV peak contains contributions also from the vacancy-phosphorus ͑VP͒ center 30,35 and possibly from the interstitial-carbonsubstitutional-phosphorus (C i P s ) complex. 36 -39 Even if it is difficult to directly resolve the contributions of these additional defects by means of conventional DLTS their thermal stability is less than that of V 2 .…”

mentioning

confidence: 99%

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

et al. 2001

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Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28 Si ions to a dose of 2ϫ10 8 cm Ϫ2 and then annealed at temperatures from 100 to 380°C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V 2 ) and vacancy-oxygen ͑VO͒ centers were studied in detail using deep-level transient spectroscopy. The decrease of V 2 centers exhibits first-order kinetics in both Czochralski-grown ͑CZ͒ and float-zone ͑FZ͒ samples, and the data provide strong evidence for a process involving migration of V 2 and subsequent annihilation at trapping centers. The migration energy extracted for V 2 is ϳ1.3 eV and from the shape of the concentration versus depth profiles, an effective diffusion length р0.1 m is obtained. The VO center displays a more complex annealing behavior where interaction with mobile hydrogen ͑H͒ plays a key role through the formation of VOH and VOH 2 centers. Another contribution is migration of VO and trapping by interstitial oxygen atoms in the silicon lattice, giving rise to vacancy-dioxygen pairs. An activation energy of ϳ1.8 eV is deduced for the migration of VO, in close resemblance with results from previous studies using electron-irradiated samples. A model for the annealing of VO, involving only three reactions, is put forward and shown to yield a close quantitative agreement with the experimental data for both CZ and FZ samples over the whole temperature range studied.

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“…The E center is known to anneal partly under these conditions. 20 The effect of the temperature treatment was to reduce the intensity of the E-center line, however, the intensities of the two Sn-related lines increased correspondingly. An anneal without bias at the same temperature had no effect on the lines.…”

Section: A Deep-level Transient Spectroscopy "Dlts…mentioning

confidence: 96%

Tin-vacancy acceptor levels in electron-irradiated n-type silicon

et al. 2000

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Document VersionPublisher's PDF, also known as Version of record Link back to DTU Orbit Citation (APA): Larsen, A. N., Goubet, J. J., Mejlholm, P., Christensen, J. S., Fanciulli, M., Gunnlaugsson, H. P., ... Dannefaer, S. (2000). Tin-vacancy acceptor levels in electron-irradiated n-type silicon. Physical Review B Condensed Matter, 62(7), 4535-4544. DOI: 10.1103/PhysRevB.62.4535 Tin-vacancy acceptor levels in electron-irradiated n-type silicon 18 Sn/cm 3 were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mössbauer spectroscopy, and positron annihilation. Two tin-vacancy ͑Sn-V͒ levels at E c Ϫ0.214 eV and E c Ϫ0.501 eV have been identified ͑E c denotes the conduction band edge͒. Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating pseudopotentials to eliminate the core electrons, and applied to large H-terminated clusters. Thus, the Sn-V pair in Si has five different charge states corresponding to four levels in the band gap.

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On the role of defect charge state in the stability of point defects in silicon

Cited by 110 publications

References 10 publications

Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

Tin-vacancy acceptor levels in electron-irradiated n-type silicon

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