On the reliability of dc-dc power converters

Shenai, K.; Singh, Prabjit; Rao, S.; Sorenson, D.; Chu, K.; Gaylon, G.

doi:10.2514/6.2000-3075

Cited by 1 publication

(1 citation statement)

References 2 publications

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“…1(b) illustrates the calculated temperature rise in the drift region of a unipolar power switch vs. power dissipated; these results further suggest that SiC material is far superior to GaN for high-power and high-temperature electronics applications. A compelling evidence to support localized failure in silicon power MOSFETs resulting from "hot spot" and "current filamentation" resulted from the single electron burnout (SEB) stress test proposed by Shenai [9]. In the SEB stress test circuit shown in the insert of Fig.…”

Section: Lessons Learned From Siliconmentioning

confidence: 99%

Material Defects and Rugged Electrical Power Switching in Semiconductors

Shenai

Neudeck

Dudley

et al. 2012

MSF

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A paradigm shift in the development and utilization of power semiconductor switch technology is proposed. This new "top down" approach begins with the field-reliability of a power semiconductor switch in a power converter circuit is subjected to long-term repetitive-switching under stressful field-operating conditions. This approach is derived from extensive field-reliability data collected on state-of-the-art silicon power MOSFETs in compact computer/telecom power supplies that clearly suggests that power MOSFET field-failures were primarily caused by bulk material defects. A careful survey of power switch technologies reported to-date in Silicon Carbide (SiC) and Gallium Nitride (GaN) further suggests that excessive bulk material defects have predominantly hindered the development and commercialization of cost-effective, high-performance, and reliable high-power devices. A reliability-driven approach is likely to "unlock" the vast potential of SiC (and GaN for moderate power levels) power device technology for high-voltage and high-power switching electronics in order to impact transformative changes.

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Section: Lessons Learned From Siliconmentioning

confidence: 99%