On the prospects of using a phase transition in Ag nanoclusters for information recording processes

Bashkova, Darya; Gafner, Yu. Ya.; Гафнер, С. Л.

doi:10.22226/2410-3535-2019-4-382-385

Cited by 5 publications

(6 citation statements)

References 16 publications

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“…Currently an overwhelming majority of works in this field deal with multicomponent alloys. However a hypothesis [12,13] was put forward and proven, though only in a molecular dynamics experiment, that memory cells can be fabricated making use of phase change and stabilization in Ag nanoparticles. Molecular dynamics experiment [12,13] showed that very rapid (at approx.…”

Section: Introductionmentioning

confidence: 99%

“…However a hypothesis [12,13] was put forward and proven, though only in a molecular dynamics experiment, that memory cells can be fabricated making use of phase change and stabilization in Ag nanoparticles. Molecular dynamics experiment [12,13] showed that very rapid (at approx. 20 TK/s rate) cooling of a liquid metallic nanoparticle to room temperature makes it amorphous whereas relatively slow cooling (at about 1 TK/s or lower rates) causes a crystalline transition.…”

Section: Introductionmentioning

confidence: 99%

“…20 TK/s rate) cooling of a liquid metallic nanoparticle to room temperature makes it amorphous whereas relatively slow cooling (at about 1 TK/s or lower rates) causes a crystalline transition. However the authors [12,13] did not suggest any idea how to practically achieve such a big difference in the cooling rates of nanoparticles located a few nanometers from one another. Furthermore providing such a high cooling rate requires nanosized metallic drops be located on a metallic substrate which might cause their crystallization upon contact within a few seconds or minutes even at room temperature.…”

Section: Introductionmentioning

confidence: 99%

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Outlooks for development of silicon nanoparticle memory cells

Talyzin¹,

Samsonov²

2019

MoEM

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Phase change memory is based on changes in the optical, electrical or other properties of materials during phase transitions, e.g. an amorphous to crystalline transition. Currently existing and potential applications of this memory are primarily based on multicomponent alloys of metals and semiconductors. However single-component nanoparticles including Si ones are also of interest as promising nanosized memory cells. The potential for developing this type of memory cells is confirmed by the fact that the optical absorption index of bulk amorphous silicon is of the same order of magnitude as that of crystalline silicon. Certainly this phenomenon can hardly be implemented with a single nanoparticle the size of which is within light wavelength. Using molecular dynamics and the Stillinger-Weber potential we have studied the regularities of melting and the conditions of crystallization of silicon nanoparticles containing within 105 atoms. We have shown that cooling of nanosized silicon drops at a 0.2 TK/s rate or higher rates causes their amorphous transition whereas single-component nanosized metallic drops crystallize in molecular dynamics experiments even at a 1 TK/s rate. Further heating of amorphous silicon nanoparticles containing above 5 ∙ 104 atoms causes their crystallization in a specific temperature range from 1300 to 1400 K. We have concluded that there is a possibility of developing phase change memory cells on the basis of the above phase transitions. An amorphous transition of a nanoparticle can be achieved by its melting and further cooling to room temperature at a 0.2 TK/s rate whereas a crystalline transition, by its heating to 1300–1400 K at a 0.2 TK/s rate followed by cooling. Results of molecular dynamics experiments suggest there is a minimum silicon nanoparticle size for which the development of phase change memory cells becomes theoretically impossible at a given temperature change rate. For a 0.2 TK/s temperature change rate this minimum size is 12.4 nm (number of atoms approx. 5 ∙ 104).

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Outlooks for development of silicon nanoparticle memory cells

Talyzin¹,

Samsonov²

2019

MoEM

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“…Ю.Я. Гафнер и его коллеги предполагают, что в роли элементов памяти могут выступать металлические наночастицы, например наночастицы Ag [26,27]. В этих работах было проведено МД моделирование наночастиц Ag и было установлено, что если охлаждение исходной расплавленной металлической наночастицы до комнатной температуры производится с очень высокой скоростью (порядка 20 ТК/с), то она переходит в аморфное состояние, тогда как при относительно более низкой скорости охлаждения (порядка 1 ТК/с и менее) -в кристаллическое.…”

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“…На основании этих результатов была выдвинута гипотеза о возможности создания элементов памяти, функционирующих за счёт изменения и последующего сохранения фазового состояния наночастиц серебра. Однако авторы работ [26,27] не привели соображений о том, как практически можно было бы обеспечить столь различную скорость охлаждения наночастиц, расположенных на расстоянии всего лишь в несколько нм друг от друга.…”

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