On the proportionality of the luminescence of zinc-sulfide-phosphors to the irradiation at low intensities

Gisolf, Janneke; ̈ger, F.A. Kro

doi:10.1016/s0031-8914(39)90108-4

Cited by 19 publications

(4 citation statements)

References 2 publications

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“…51 Remarkably, already early studies of PL from phosphors and photoconductors (ZnS and ZnCdS) in 1930 s-1950 s reported on a superlinear increase of PL intensity with G that was commonly described with a power law I PL / G m with various powers m, exceeding 1 and sometimes 2. [52][53][54][55][56][57][58] An important feature of this unusual PL behavior is tunability of the effect by temperature. Specifically, the region of the nonlinear increase of PL efficiency shifts to higher G with increasing temperature or with increasing concentration of PL "killer centers" (centers of nonradiative recombination).…”

Section: Tunable Quenching Of Pl In Other Semiconductorsmentioning

confidence: 99%

Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors

Reshchikov

2014

Journal of Applied Physics

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Mechanisms of thermal quenching of photoluminescence (PL) related to defects in semiconductors are analyzed. We conclude that the Sch€ on-Klasens (multi-center) mechanism of the thermal quenching of PL is much more common for defects in III-V and II-VI semiconductors as compared to the Seitz-Mott (one-center) mechanism. The temperature dependencies of PL are simulated with a phenomenological model. In its simplest version, three types of defects are included: a shallow donor, an acceptor responsible for the PL, and a nonradiative center that has the highest recombination efficiency. The case of abrupt and tunable thermal quenching of PL is considered in more detail. This phenomenon is predicted to occur in high-resistivity semiconductors. It is caused by a sudden redirection of the recombination flow from a radiative acceptor to a nonradiative defect. V

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Section: Tunable Quenching Of Pl In Other Semiconductorsmentioning

confidence: 99%

Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors

Reshchikov

2014

Journal of Applied Physics

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“…[5][6][7] However, even as early as 1939, studies of PL from phosphors and photoconductors (ZnS, ZnCdS, and CdS) showed a superlinear increase in PL intensity with G that was commonly described by a power law I P L ∝ G m , with powers of m exceeding 1 and sometimes 2. [8][9][10][11][12][13][14][15] An important feature of this unusual PL behavior was its tunability with temperature. Specifically, the region of the nonlinear increase of PL efficiency shifted to higher G as temperature increased or as the concentration of PL "killer centers" (centers of nonradiative recombination) increased.…”

Section: Introductionmentioning

confidence: 99%

Superlinear increase of photoluminescence with excitation intensity in Zn-doped GaN

et al. 2013

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Follow this and additional works at: http://scholarscompass.vcu.edu/phys_pubs Part of the Physics Commons Reshchikov, M.A., Olsen, A.J., Bishop, M.F., et al. Superlinear increase of photoluminescence with excitation intensity in Zn-doped GaN. Physical Review B, 88, 075204 (2013).We have observed a superlinear increase of photoluminescence (PL) intensity in a narrow range of excitation intensities for Zn-doped GaN. The characteristic intensity at which the abrupt increase occurs increases with increasing temperature. This is unlike the usual observations for defects in semiconductors in which the PL intensity increases linearly with excitation intensity, saturating at high intensity because defects become saturated with photogenerated charge carriers. The observed phenomenon is attributed to a redirection of electron and hole flow from nonradiative centers at low excitation intensity to a recombination path via the Zn Ga acceptor at high excitation intensity. This is the same explanation responsible for the abrupt thermal quenching of PL reported earlier [Reshchikov et al., Phys. Rev. B 84, 075212 (2011).]

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“…a la temperature ambiante une large bande spectrale a emission bleue ou verte qui depend de l'intensit6 d'irradiation. I1 est bien connu que I'émission bleue crolt plus rapidement [1], [2], que la verte lorsque 1'intensite d'irradiation augmente. Le spectre de photoluminescence se d6place vers les courtes longueurs d'onde lorsque la temp6rature d6crolt ( fig.…”

Section: Fig 1 -Spectres De Photoluminescence 4 Diff6rentesunclassified

Étude de la thermoluminescence et de la conductibilité d'un ZnS: Cu, Cl a deux bandes d'émission

Ceva¹,

Lambert²

1965

J. Phys. France

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électroluminescent présente, sous irradiation UV (3 650 Å) deux bandes d'émission : l'une bleue, l'autre verte. On observe de grandes modifications spectrales de l'émission lumineuse aux environs des maximums de thermoluminescence. Celle-ci a montré l'existence de deux pièges l'un à 0,21 eV lié à l'émission bleue, l'autre à 0.26 eV lié à l'émission verte. Seul le pic vert est accompagné de conductibilité. Ces expériences suggèrent une interaction entre le piège à 0,21 eV et le centre bleu. Abstract. 2014 An electroluminescent ZnS shows two emission bands under UV irradiation (3 650 Å), one blue and the other green. Large spectrum modifications are observed around the thermoluminescence maximum. The glow curves show two types of shallow traps one 0. 21 eV deep related to the blue emission and the other 0,26 eV deep related to the green emission. Conductivity is observed closely related with the green peak only. These facts suggest that the trap at 0.21 eV interacts with the blue centre.

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On the proportionality of the luminescence of zinc-sulfide-phosphors to the irradiation at low intensities

Cited by 19 publications

References 2 publications

Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors

Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors

Superlinear increase of photoluminescence with excitation intensity in Zn-doped GaN

Étude de la thermoluminescence et de la conductibilité d'un ZnS: Cu, Cl a deux bandes d'émission

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