On the Problem of Determining the Bulk Lifetime by Photoconductivity Decay on the Unpassivated Samples of Monocrystalline Silicon

Anfimov, I. M.; Kobeleva, S. P.; Pylnev, A. V.; Shchemerov, Ivan; Egorov, D. S.; Yurchuk, Sergey

doi:10.1134/s1063739717080030

Cited by 7 publications

(2 citation statements)

References 16 publications

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“…52 As charge carrier lifetime is typically defined as the statistical average time calculated by the recombination of electrons and holes through multiple pathways at different times, it is difficult to track individual charge carrier lifetimes. Thus, the lifetime (τ) has been inferred from PL, [53][54][55] photoconductance, 56,57 photovoltaic, 52,58 and photocatalytic 43,[59][60][61] properties, in which generation and recombination occur. The radiative (τ r −1…”

Section: Charge Separation Efficiencymentioning

confidence: 99%

Modulating charge carriers in carbon dots toward efficient solar‐to‐energy conversion

Kim

Lee

et al. 2021

Carbon Energy

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Growing attention to the development of sustainable solar-to-energy conversion applications has resulted in the synthesis of promising and environment-friendly nanomaterials as energy harvesters. Among various carbon nanomaterials, carbon dots (CDs) have received significant attention due to their excellent light absorption capability, broad absorption region, and superior photostability with enormous potential for solar energy applications. Therefore, utilizing and modulating the charge carriers generated from CDs is critical for achieving a high energy conversion efficiency of CDs. Herein, we focus on the distinct characteristics of CDs as energy converters from charge excitation to charge separation and transfer for various solar-to-energy applications, including photovoltaic cells, photocatalysts, and photoelectrocatalysts. We anticipate that this review will offer insight into the synthesis and design of novel nanocomposites with a fundamental analysis of the photochemical properties and future development of energy conversion devices. K E Y W O R D Scarbon dots, charge carrier, energy conversion, photocatalyst, photoelectrocatalyst | INTRODUCTIONCarbon dots (CDs) have received widespread attention in the scientific community as one of the latest additions to carbon-based nanomaterials. CDs, which are typically defined as quasi-spherical carbon nanoparticles of <10 nm, exhibit unique physical, chemical, and optical properties, including high light absorption, tunable photoluminescence, and excellent electron donor/acceptor characteristics. [1][2][3][4][5][6] Owing to these advantages, CDs can be applied in bioimaging, 7,8 biosensing, 9-11 drug delivery, [12][13][14][15] phototherapy, [16][17][18] and light-harvesting applications in energy transducers. [19][20][21] Moreover, the facile and mild synthetic nature of CDs using various combinations of carbon precursors and other molecular agents can provide easy access to the formation of sp 2 -hybridized carbonaceous core of CDs, with an amorphous shell rich in surface functional groups containing oxygen and nitrogen. These surface functional moieties can be potentially functionalized with other organic molecules on the CD surface, allowing the control of photoluminescence (PL)

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Section: Charge Separation Efficiencymentioning

confidence: 99%

Modulating charge carriers in carbon dots toward efficient solar‐to‐energy conversion

Kim

Lee

et al. 2021

Carbon Energy

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“…The electrophysical characteristics of semiconductor structures with an n + -p junction depend on the volume and surface recombination rates, the impurities and radiation defects distributions. The parameters of volume and surface recombination were measured by the photoconductivity decay method [7,8] . Methods for determining recombination parameters are being improved.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Effect of Radiation Defects by Low-energy Protons on Electrophysical Properties of Silicon N+ -P-P+Structure

M.,

R.,

et al. 2023

semicond. sci. and inf. n.a.

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Nowadays, radiation engineering is a promising direction in the creation of semiconductor devices. The proton irradiation is used to controllably change the optical, electrical, recombination, mechanical and structural properties of the semiconductors. Low-energy protons make it possible to purposefully change material properties near the surface where the n+ -p junction is located. In this paper, the impact of low-energy protons on the electro physical parameters of n+ -p-p+ silicon photoelectric converters (SPC) is analyzed. The current-voltage characteristics and switching time of these SPCs are measured. The switching time is determined using rectangular bipolar voltage pulses with an amplitude of 10 mV, a frequency of 200 kHz, or a frequency of 1 MHz. A theoretical and experimental analysis of the obtained results is performed. The comparison of experimental data with the results of calculations shows that protons with an energy of 180 keV and a dose of 1015 cm–2 create two regions in the space charge region of the n+ -p junction with different switching times of 4.2 × 10–7 s and 5.5 × 10–8 s. SPC frequency characteristics have been improved by reducing the effective lifetime by 5-10 times. This effect can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.

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Influence of low-energy proton irradiation on the effective lifetime in the space charge region of silicon n⁺-p junctions

Bogatov

Grigoryan

Коваленко

et al. 2021

J. Phys.: Conf. Ser.

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The effect of low-energy proton irradiation on the pulse characteristics of silicon n+-p-p+ structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 1015 cm−2 creates a region with an effective lifetime of 5.5·10−8 s in the space charge region of the n+-p junction. Such elements can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.

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On the Problem of Determining the Bulk Lifetime by Photoconductivity Decay on the Unpassivated Samples of Monocrystalline Silicon

Cited by 7 publications

References 16 publications

Modulating charge carriers in carbon dots toward efficient solar‐to‐energy conversion

Modulating charge carriers in carbon dots toward efficient solar‐to‐energy conversion

Analysis of the Effect of Radiation Defects by Low-energy Protons on Electrophysical Properties of Silicon N+ -P-P+Structure

Influence of low-energy proton irradiation on the effective lifetime in the space charge region of silicon n⁺-p junctions

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On the Problem of Determining the Bulk Lifetime by Photoconductivity Decay on the Unpassivated Samples of Monocrystalline Silicon

Cited by 7 publications

References 16 publications

Modulating charge carriers in carbon dots toward efficient solar‐to‐energy conversion

Modulating charge carriers in carbon dots toward efficient solar‐to‐energy conversion

Analysis of the Effect of Radiation Defects by Low-energy Protons on Electrophysical Properties of Silicon N+ -P-P+Structure

Influence of low-energy proton irradiation on the effective lifetime in the space charge region of silicon n+-p junctions

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Influence of low-energy proton irradiation on the effective lifetime in the space charge region of silicon n⁺-p junctions