On the Preparation of Hard Oxide Films with Precisely Controlled Thickness on Evaporated Aluminum Mirrors*

Hass, G.

doi:10.1364/josa.39.000532

Cited by 190 publications

(45 citation statements)

References 10 publications

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“…It has been known that the anodization of Al in this electrolyte produces a dense oxide on the surface of anode whose thickness is nearly proportional to the applied voltage. 11 On unpatterned Al films, we found a relation 1.3 nm/V between the thichness of the oxidized layer and the anodization voltage (ϳ1.0 nm/V for the reduction of Al film thickness 11 ͒. We applied a dc anodization voltage V a between the cathode and the anode, while monitoring the current through the droplet I a .…”

mentioning

confidence: 94%

Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement

Nakamura

Klein

Tsai

1996

Applied Physics Letters

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We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron-beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. The limit of the increase in the charging energy is attributed to the initial scattering in the junction sizes.

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mentioning

confidence: 94%

Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement

Nakamura

Klein

Tsai

1996

Applied Physics Letters

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“…The average field in such films is thus independent of the applied potential difference, neglecting any potential drops other than that across the barrier oxide, and for aluminum in aqueous ammonium tartrate is of the order of (13 A-V -1)-1 or 7.7 )< 108 V-cm -1 (29). This field represents a steady state in which a finite ionic flow through the barrier oxide occurs in equilibrium with the rate of dissolution of the barrier oxide at the oxide-electrolyte interface (16).…”

Section: Discussionmentioning

confidence: 99%

“…The functionality in the latter case is not established (16). The simplest explanation of I-laas's data (29) is that the field is homogeneous throughout the oxide and that transport processes other than a field-dependent diffusional flow are unimportant. In such a model the ionic contribution to the terminal leakage current would necessarily be independent of the applied potential difference.…”

Section: Discussionmentioning

confidence: 99%

Steady‐State Anodic Leakage Current in Barrier‐Type Aluminum Oxide Films

Anderson

Devereux

1975

J. Electrochem. Soc.

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When aluminum is polarized potentiostatically in a barrier-forming electrolyte, such as aqueous ,ammonium tartrate, the current passed diminishes steadily to a low value commonly termed the leakage current. This value is not stable, but increases gradually, attaining a constant value after many hours. The dependence of this steady-state current on potential has been studied for aluminum electrodes in 1M aqueous ammonium tartrate at pH 7 and test temperatures of 30 ~ 50 ~ and 70~ In the overpotential range of approximately 50-80V, current is independent of overpotential, while exponential dependence of the anodic current on overpotential is seen at lower overpotentials, with a significant reverse contribution below approximately 20V. The values of both forward and reverse exponential coefficients are extremely anomalous in comparison to normal Tafel slopes. Above approximately 80V, current increases rapidly with potential until breakdown occurs.During the potentiostatic formation of barrier-type anodic oxide films on "valve" metals the anodic current is seen to decrease monotonically to a minimum value, commonly termed the "leakage current." For aluminum anodized in an electrolyte conducive to barrier film formation, such as neutral aqueous ammonium tartrate, this minimum is reached in a matter of minutes. However, this leakage current is not stable, but gradually increases, attaining a stable value only after many hours. A similar effect is seen if the value of the applied potential is reduced after the leakage current has stabilized. There is then a marked reduction in the anodic current, with a new minimum value being observed after a period of several minutes. Again, however, this value is not stable, but increases at an accelerating rate with a higher, apparently stable value being attained after many hours. This is apparently a distinct phenomenon from that observed by several previous investigators (1-8), in which a transient current response is seen following an abrupt change in applied potential or an interruption in the application of an anodic potential. Such transients have durations of the order of minutes, two to three orders of magnitude shorter than the time required for establishment of a stable leakage current, and have been attributed to a relaxation process involving the conducting ions in the oxide (9, 10).Research on valve metal electrodes has been extensively reviewed (9-17); therefore, it is necessary only to refer to those aspects of previous work 'that directly pertain to the establishment of a stable leakage current through the anodic oxides formed on such electrodes. Much earlier work was stimulated by the rectifying properties of valve metal electrodes. Van Geel (18, 19) and Taylor and Haring (20) attributed this behavior to the occurrence of a p-n junction with-* Electrochemical Society Active Member.Key words: electronic current, polarization~ transients.in the anodic oxide, while Saski proposed a p-i-n junction (21). The latter observation is somewhat supported by the resul...

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“…where ;1 =ion current (plate 1) ;2 = ion current (plate 2) e = the electronic charge I = radiant flux entering chamber example 1 X 10-10 A (C/s) IX 10-11 A 1.6 X 10-19 C (2) 101 where io=the emissive photocurrent from the photo diode I =the radiant flux incident on the photocathode E =the quantum efficiency (electrons/photon) of the photodiode k = the correction for monochromator gas absorption (in the ionization chamber mode) may be used to determine the quantum efficiency. Combining eqs (1) and (2) gives:…”

Section: Ionization Chamber Gong Wavelengths)mentioning

confidence: 99%

Far ultraviolet detector standards

Canfield¹,

Swanson²

1987

J. RES. NATL. BUR. STAN.

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A description is given of the NBS program in which special photodiodes for the far ultraviolet spectral region (5-254 nm) are made available as transfer standards. These detectors are calibrated in terms of quantum efficiency (photoelectrons per incident photon) as a function of wavelength. Descriptions are also given of the calibration principles, calibration systems, and photodiode types involved in this program. Calibrations reference to the photoionization of rare gases.

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On the Preparation of Hard Oxide Films with Precisely Controlled Thickness on Evaporated Aluminum Mirrors*

Cited by 190 publications

References 10 publications

Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement

Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement

Steady‐State Anodic Leakage Current in Barrier‐Type Aluminum Oxide Films

Far ultraviolet detector standards

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