On the powder diffraction pattern of crystals with stacking faults

Estévez-Rams, E.; Leoni, Matteo; Scardi, Paolo; Aragón-Fernández, B.; Fueß, H.

doi:10.1080/14786430310001613219

Cited by 47 publications

(48 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Each {hkl} reflection family is split into its subcomponents hkl that are individually modelled to fully account for defects influencing them in a peculiar way (e.g. stacking faults [13,28]). Fully equivalent hkl can be grouped and assigned a cumulative weight w hkl .…”

Section: Implementation In Pm2kmentioning

confidence: 99%

Instrumental profile of MYTHEN detector in Debye-Scherrer geometry

Gozzo¹,

Cervellino

Leoni

et al. 2010

Zeitschrift für Kristallographie

View full text Add to dashboard Cite

Instrumental line profile / Profile aberrations / Synchrotron radiation XRPD / Debye-Scherrer geometry / Position sensitive detector / MYTHEN / TOPAS / PM2K / WPPM Abstract. The main aberrations affecting data collected with 1D position sensitive detectors in Debye-Scherrer capillary geometry are examined, and analytical corrections proposed. The equations are implemented in two of the most advanced software based on the Rietveld and Whole Powder Pattern Modelling methods, respectively, for structure and microstructure analysis. Application to MYTHEN, a fast single photon counting detector developed at the Swiss Light Source, is discussed in detail.

show abstract

Section: Implementation In Pm2kmentioning

confidence: 99%

Instrumental profile of MYTHEN detector in Debye-Scherrer geometry

Gozzo¹,

Cervellino

Leoni

et al. 2010

Zeitschrift für Kristallographie

View full text Add to dashboard Cite

show abstract

“…In [17] a biunivocal relation was found between the symmetric and asymmetric contribution of peak profiles affected by stacking faults. The importance of such relations is that once a symmetrical component is chosen the asymmetrical component is completely determined, which reduces, at least in this sense, the arbitrariness of the asymmetry modeling.…”

Section: Introductionmentioning

confidence: 85%

“…In this work we will apply the general formalism described in [17] to specific symmetric analytical profile functions. The purpose of doing so will be first to obtain from the assumed symmetrical profile the asymmetric term that corresponds to that choice.…”

Section: Introductionmentioning

confidence: 99%

The use of analytical peak profile functions to fit diffraction data of planar faulted layer crystals

Estévez-Rams¹,

Pentón

Martinez-Garcia

et al. 2004

Cryst. Res. Technol.

Self Cite

View full text Add to dashboard Cite

The implication of the use of particular peak profile functions in the fit of diffraction data on the nature and density of stacking faults in layered solids is studied. Common type of profile functions are studied: Gauss, Lorentz, pseudoVoigt and Pearson VII. An additional peak profile is introduced. For each profile function the decaying term of the probability correlation function is determined and the expression for the correlation length is deduced. The form of the asymmetric component of each profile is also reported. Experimental data is fitted using each profile and the results are discussed.

show abstract

“…[27,28,[33][34][35][36], and (vii) planar defect densities, cf. [1,2,29,[37][38][39][40][41][42][43][44][45][46][47][48][49][50][51] or (viii) different types of internal stresses of first and second order, (ix) especially longrange-internal stresses prevailing in heterogeneous microstructures, cf. [52][53][54][55][56][57][58], (x) fluctuation of chemical composition, cf.…”

Section: à2mentioning

confidence: 99%

Characterization of defect structures in nanocrystalline materials by X-ray line profile analysis

Gubicza¹,

Ungár²

2016

Nano Online

View full text Add to dashboard Cite

Abstract. X-ray line profile analysis is a powerful alternative tool for determining dislocation densities, dislocation type, crystallite and subgrain size and size-distributions, and planar defects, especially the frequency of twin boundaries and stacking faults. The method is especially useful in the case of submicron grain size or nanocrystalline materials, where X-ray line broadening is a well pronounced effect, and the observation of defects with very large density is often not easy by transmission electron microscopy. The fundamentals of X-ray line broadening are summarized in terms of the different qualitative breadth methods, and the more sophisticated and more quantitative whole pattern fitting procedures. The efficiency and practical use of X-ray line profile analysis is shown by discussing its applications to metallic, ceramic, diamond-like and polymer nanomaterials.

show abstract

On the powder diffraction pattern of crystals with stacking faults

Cited by 47 publications

References 9 publications

Instrumental profile of MYTHEN detector in Debye-Scherrer geometry

Instrumental profile of MYTHEN detector in Debye-Scherrer geometry

The use of analytical peak profile functions to fit diffraction data of planar faulted layer crystals

Characterization of defect structures in nanocrystalline materials by X-ray line profile analysis

Contact Info

Product

Resources

About