“…Physically, the magnetization process is closely related to domain wall movement, and the coercivity strongly depends on the degree of pinning of domain wall. 12,13) Microstructural impurities, such as inclusion, dislocation and grain boundary may hinder the domain wall movement in ferromagnetic materials, which are potentials of pinning sites of domain wall. A dislocation, which is a typical lattice defect evolving local strain due to an atomic mismatch with the matrix, imparts a force on the domain wall, and thus, could be an effective obstacle to domain wall movement.…”