On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes

Che, Jiamang; Chu, Chunshuang; Tian, Kangkai; Kou, Jianquan; Shao, Hua; Zhang, Yonghui; Bi, Wengang; Zhang, Zihui

doi:10.1186/s11671-018-2776-y

Cited by 23 publications

(9 citation statements)

References 36 publications

(31 reference statements)

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“…In 2009, they demonstrated that the vertical current conduction geometry of a device could also effectively reduce thermal impedance 173 . In 2018 Che et al designed a p -AlGaN/ n -AlGaN/ p -AlGaN structured current spreading layer in the p -type hole injection layer 174 . In 2019 Chun et al improved the current spreading of DUV LEDs by modulating the resistivity in the n -AlGaN layer 175 .…”

Section: Manipulation Of Polarization Fieldsmentioning

confidence: 99%

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Gao

Cai

et al. 2021

Light Sci Appl

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As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.

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Section: Manipulation Of Polarization Fieldsmentioning

confidence: 99%

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Gao

Cai

et al. 2021

Light Sci Appl

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“…Early studies have demonstrated that a B x Al 1−x N/Al y Ga 1−y N heterostructure could possibly create a large potential barrier for electron blocking while also offering minimum valence band offsets for hole injection as a result of their unique band offset characteristics-a nearly zero valence band offset in B x Al 1−x N/Al y Ga 1−y N heterostructures [142][143][144][145][146]. In addition to these promising strategies, proper design of band structures in the LQB and p-AlGaN hole injection layer, which n-and p-type injection layer design Changed Al-composition of p-region An electric-field reservoir [115] PNP-AlGaN structured current spreading layers [137] Graded p-type layer Serrated p-type layer [117] Segmentally graded p-type layer [138] Multilayers in p-region SL p-contact layer [139] Insertion layers in n-region HBL [119] TJ implementation Metal [140] Wide band-gap materials [141] Narrow band-gap materials [121,123,124] Sections Methods Structures Ref.…”

Section: Conclusion and Prospectsmentioning

confidence: 99%

Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review

Ren

Liu

et al. 2019

J. Phys. D: Appl. Phys.

109

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III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as promising candidates for energy-efficient, environment-friendly and robust UV lighting sources with potential applications in water/air purification, sterilization, and bio-sensing. However, the performance of state-of-art DUV LEDs is far from satisfactory for commercialization due to their low internal quantum efficiency, large current leakage and efficiency droop at high current injection, etc. Extensive efforts have been devoted to properly designing the band structures of such luminescent devices to enhance their output power. In this review, we summarize the recent progress of various energy band designs and of the engineering of DUV LEDs, with particular attention paid to the various approaches in band engineering of electron-blocking layers, quantum wells, quantum barriers and the implementation of many novel structures such as tunnel junctions and ultrathin quantum heterostructures utilized to enhance their efficiency. These inspirational approaches pave the way towards the next generation of greener and more efficient UV sources suitable for practical applications.

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“…On the other hand, when the quantum barriers are thinned, a reduced vertical resistivity will be correspondingly generated. According to the report by Che et al [34], when the vertical resistance is reduced, the lateral current spreading can be suppressed such that the current tends to be apart from the mesa edge. This speculation is also proven when we refer to Fig.…”

Section: Proof Of the Better Current Confinement Within The Mesa Regimentioning

confidence: 99%

Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading

et al. 2020

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Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (μLEDs) strongly suffer from surface recombination that is induced by sidewall defects. Moreover, as the chip size decreases, the current spreading will be correspondingly enhanced, which therefore further limits the carrier injection and the external quantum efficiency (EQE). In this work, we suggest reducing the nonradiative recombination rate at sidewall defects by managing the current spreading effect. For that purpose, we properly reduce the vertical resistivity by decreasing the quantum barrier thickness so that the current is less horizontally spreaded to sidewall defects. As a result, much fewer carriers are consumed in the way of surface nonradiative recombination. Our calculated results demonstrate that the suppressed surface nonradiative recombination can better favor the hole injection efficiency. We also fabricate the μLEDs that are grown on Si substrates, and the measured results are consistent with the numerical calculations, such that the EQE for the proposed μLEDs with properly thin quantum barriers can be enhanced, thanks to the less current spreading effect and the decreased surface nonradiative recombination.

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On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes

Cited by 23 publications

References 36 publications

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review

Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading

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