On the Origin of Steep $I$ –$V$  Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices

Padilla, Alvaro; Burr, Geoffrey W.; Shenoy, Rohit S.; Raman, Karthik V.; Bethune, Donald S.; Shelby, R. M.; Rettner, Charles; Mohammad, J.; Virwani, Kumar; Narayanan, Pritish; Deb, Arpan Krishna; Pandey, Rajan K.; Bajaj, Mohit; Murali, K. V. R. M.; Kurdi, B. N.; Gopalakrishnan, Kailash

doi:10.1109/ted.2015.2389832

Cited by 8 publications

(5 citation statements)

References 11 publications

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“…It should be noted that the Cu ions were not uniformly distributed in the CuGeS layer (as observed from the Cu signal indicated by a solid green line), with a more enhanced intensity on interface than that in the body, implying the Cu ions tend to accumulate at the interface. This result is consistent with the results reported in Padilla's study, 37 where the metal ions of a MIEC material were found to have a U shape distribution in the metal-MIEC-metal structure at zero bias, with a higher concentration on the interface than in the center. This is a natural phenomenon of ion motion to keep a dynamic equilibrium between electrostatic ions drifting and diffusion.…”

Section: Results and Dissussionsupporting

confidence: 93%

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

et al. 2016

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Vertical crossbar arrays provide a cost-effective approach for high density three-dimensional (3D) integration of resistive random access memory. However, an individual selector device is not allowed to be integrated with the memory cell separately. The development of V-RRAM has impeded the lack of satisfactory self-selective cells. In this study, we have developed a high performance bilayer self-selective device using HfO2 as the memory switching layer and a mixed ionic and electron conductor as the selective layer. The device exhibits high non-linearity (>10(3)) and ultra-low half-select leakage (<0.1 pA). A four layer vertical crossbar array was successfully demonstrated based on the developed self-selective device. High uniformity, ultra-low leakage, sub-nA operation, self-compliance, and excellent read/write disturbance immunity were achieved. The robust array level performance shows attractive potential for low power and high density 3D data storage applications.

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Section: Results and Dissussionsupporting

confidence: 93%

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

et al. 2016

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“…7 can be explained by the size dependence of noise as in the RTN case [11], [13]. Here, bistable defects, namely, charged/uncharged point defects, such as oxygen vacancies [26], [27] or Cu impurities [28], close to the CF surface in LRS fluctuate between two different charge states, hence resulting in an intermittent depletion of carriers within the CF. As R increases, the CF becomes smaller, thus resulting in a transition from partial depletion at low R to full depletion at large R [11].…”

Section: Resistance Dependence Of Noisementioning

confidence: 99%

Noise-Induced Resistance Broadening in Resistive Switching Memory—Part I: Intrinsic Cell Behavior

Ambrogio

Balatti

McCaffrey

et al. 2015

IEEE Trans. Electron Devices

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Resistive-switching memory (RRAM) is attracting a widespread interest for its outstanding properties, such as low power, high speed, and good endurance. A crucial concern for RRAM is the current fluctuation, which induces significant broadening of resistance levels in single-bit and multilevel applications. This paper addresses low-frequency fluctuations focusing on 1/ f and random telegraph noise contributions in intrinsic, i.e., typical, cells. The current fluctuations are studied in both the time and frequency domains, and the analytical models are presented to predict the resistance broadening for different RRAM states. Finally, the resistance dependence of noise and broadening is studied with the support of a 3-D finite-element model.

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“…In TS devices, switching has been shown to originate from the motion of metallic ions and vacancies leading to a sharp increase in current, with switching voltage that depends on the material's band gap. 25 Interestingly, the same materials have been used as electrolytes across the different classes of resistance switching devices. For instance, copper-doped germanium sulfides and silicon dioxide have been demonstrated as effective electrolytes for application as both ECM and TS.…”

Section: ■ Introductionmentioning

confidence: 99%

“…By contrast, threshold switching is characterized by a diodelike I – V signal with an abrupt change in the resistance state of the device under an applied voltage. In TS devices, switching has been shown to originate from the motion of metallic ions and vacancies leading to a sharp increase in current, with switching voltage that depends on the material’s band gap . Interestingly, the same materials have been used as electrolytes across the different classes of resistance switching devices.…”

Section: Introductionmentioning

confidence: 99%

Exploring the Compositional Ternary Diagram of Ge/S/Cu Glasses for Resistance Switching Memories

2019

J. Phys. Chem. C

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Amorphous semiconductors with tailored ionic and electronic conductivities are central to the operation of emerging resistive memory. However, because of the large amount of potential candidates and compositions, only limited numbers of materials have been tested experimentally. To accelerate the search of efficient solid electrolytes for resistive switching devices, we developed parameters to describe copper-doped germanium sulfides based on ReaxFF, a reactive molecular dynamics framework. The force field was optimized against a training set of first-principle calculations including crystals, amorphous structures, some small molecules, and clusters to describe the atomic interactions among Ge, S, and Cu elements. Based on this novel atomistic model, we studied the mobility of Cu as a function of the ternary composition of amorphous Ge x S y Cu z , and we investigated the corresponding atomic and electronic structures of each solid electrolyte in details. Our analysis led to semiconducting compositions with high Cu mobility and favoring the formation of Cu clusters. Molecular dynamics simulations of switching under an external potential show that devices based on electrolytes with high Cu mobility form thick metallic filaments, and an amorphous copper sulfide phase was observed at the interface. Such an atomistic model is critical to improve our understanding of the atomic mechanism of filamentary growth and can be used to improve retention and endurance of resistive switching devices, which are still limiting their widespread commercial use.

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On the Origin of Steep $I$ –$V$ Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices

Cited by 8 publications

References 11 publications

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

Noise-Induced Resistance Broadening in Resistive Switching Memory—Part I: Intrinsic Cell Behavior

Exploring the Compositional Ternary Diagram of Ge/S/Cu Glasses for Resistance Switching Memories

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