On the origin of photoluminescence in indium oxide octahedron structures

Abstract

A sixfold decrease in photoluminescence signal intensity at 590nm with increase in deposition time from 3to12h has been observed in single crystalline indium oxide octahedron structures grown by vapor-phase evaporation method. Electron paramagnetic resonance and energy dispersive x-ray analysis confirm that the concentration of oxygen vacancies increases with deposition time. These results are contrary to the previous reports where oxygen vacancies were shown to be responsible for photoluminescence in indium oxide structures. Our results indicate that indium interstitials and their associated complex defects other than oxygen vacancies are responsible for the photoluminescence in In2O3 microstructures.

Cadmium Sulfide Quantum Dots Supported on Gallium and Indium Oxide for Visible‐Light‐Driven Hydrogen Evolution from Water

“…It has also been reported that the PL of In 2 O 3 can be quenched by the presence of surface defects. [43] Although the quantification of defects of radiative and nonradiative natures in bulk and at the surface of the materials and further correlation with the activity are not straightforward, the PL spectra, photocurrents, and photocatalytic activities obtained in this work corroborate each other. A more systematic investigation of the effects of the surface properties and extension to other types of metal oxide support is underway to elucidate the mechanism more thoroughly.…”

Indium oxide octahedrons based on sol–gel process enhance room temperature gas sensing performance

“…Utilizing Ni as catalyst, Jia et al prepared In 2 O 3 octahedrons at 950°C by evaporating In 2 O 3 /In mixture under (Ar + CH 4 ) atmosphere [9]. At a temperature of 960°C, Kumar et al prepared In 2 O 3 octahedrons from In 2 O 3 /carbon mixture with and without the assistance of gold catalyst, respectively [16,17].…”

Room-temperature emission-color switching of Ba 3 MgSi 2 O 8 : Eu 2+ and the photochemical reaction mechanism

“…A part of fully grown particles showed hexagonal shape, reflecting the trigonal crystal system of Ba 3 MgSi 2 O 8 . [11][12][13][14][15][16][17], the unpaired electrons should be trapped in V O and make F centers [8]. After the photostimulation, the F centers within Ba 3 MgSi 2 O 8 (g=2.004) showed an increase from 8.7×10 15 spins/cm 3 to 2.2×10 16 spins/cm 3 .…”