On the Origin of Low-Resistance State Retention Failure in HfO<sub>2</sub>-Based RRAM and Impact of Doping/Alloying

Traoré, Boubacar; Blaise, P.; Vianello, Elisa; Grampeix, H.; Jeannot, S.; Perniola, L.; Salvo, B. De; Nishi, Yoshio

doi:10.1109/ted.2015.2490545

Cited by 81 publications

(77 citation statements)

References 21 publications

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“…Increasing both the amplitude and the width can change conductance of the device. [32][33][34][35][36] Notably, the switching stability in those devices with a Ti interfacial layer is much better than in those without, as reported in our previous study. The normalized energy versus normalized conductance graph in Figure 3d shows an exponential increase of the energy with increasing conductance.…”

Section: Wwwadvelectronicmatdementioning

confidence: 66%

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Banerjee

Hwang

2019

Adv Elect Materials

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electron charge and h is the Planck constant. [6] Electronic switches with atomicsized functional building blocks are the main driving force of modern nanotechnology. The design of atomic dimensional memory devices is limited by the lithographic bottleneck. Nevertheless, the origin of atomic contact in nanoscale architectures is being investigated. [7] The conductive bridge RAM device with quantized conductance (QC) effect proposed by Terebe et al., [8] was based on the fabrication of a gap-type Pt/ nano-gap/Ag 2 S/Ag structure. A small operating voltage of ±600 mV can switch the device between the "OFF" and "ON" states. When a device changes its resistance from high to low, it is usually known as "set"; the reverse change is known as "reset". The QC effect is suitable to realize multiple levels in devices and has been studied in both electrochemical metallization type [9][10][11][12][13][14] and valance change memory type [15,16] gap-less RRAM. In most cases, switching is the after-effect of a stress dependent virginity breakdown, which can consolidate the CF for switching operations. Because the behavior of the CF of conductive bridge RAM is considered to be an example of atomic-switching, further discussion is mainly focused on conductive bridge RAM type devices. Higher initial stress injects more cations into the switching oxide layer that results in poor control over the reset process, resulting in abrupt state transition, and atomic conductance instability. [9][10][11][12][13][14] In another approach, single-atom memory has been proposed for mechanically controllable break junctions (MCBJs), [17] which are a kind of electronic device formed by two knife-edged metal wires placed with a nanometer sized gap, as shown in Figure 1a. MCBJs are well known as atomic or single molecular junction, and have even been investigated to in the context of control of quantum interferences in graphene. [18,19] In an MCBJ, when the two wires are curved, broadening the gap, the contact is broken, and the reverse order experiences an atomic-contact at the break junction. Break junctions are a possible approach to the fabrication of atomic switches. However, in reality, for an electronic device, such design is burdensome due to exorbitant lithographic processes. It is possible to prepare a break junction by electrically controlling the ion migration process in conductive bridge RAM devices, as the switching mechanism is driven by the formation of metallic wire like CF. Although the concept of QC in conductive bridge RAM has been investigated for over a decade, precise and reliable atomic-level control Atomic-level control of conductance in a Cu/Ti/HfO 2 /TiN-based electrically controllable break junction (ECBJ) is demonstrated. The ECBJ is designed through sophisticated stack engineering and refined electrical operation. Control over bias-induced ion migration is the key to forming the ECBJ. Precise atomic-level control is accomplished with an optimized high temperature forming (OHTF) scheme. OHTF-controlled single-atomic switch...

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Section: Wwwadvelectronicmatdementioning

confidence: 66%

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Banerjee

Hwang

2019

Adv Elect Materials

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“…Such strong retention of LRS is also very promising, given that LRS retention is regarded as particularly critical because of the filamentary nature of the RRAM device [4]. As a reference, HfO x -based RRAM shows weaker LRS stability, with a drift by a factor 2 in 1 h at 250°C for a smaller resistance R = 5 k, corresponding to a larger CF than in this paper [31]. The better stability at high temperature might be attributed to the chemical interaction between Ti and SiO x , where Ti can form both TiSi silicide and several Magneli-type compounds with oxygen [32].…”

Section: A High-temperature Retentionmentioning

confidence: 68%

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices

Bricalli

Ambrosi

Laudato

et al. 2018

IEEE Trans. Electron Devices

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Resistive switching memory (RRAM) is among the most mature technologies for next generation storage class memory with low power, high density, and improved performance. The biggest challenge toward industrialization of RRAM is the large variability and noise issues, causing distribution broadening which affects retention even at room temperature. Noise and variability can be addressed by enlarging the resistance window between lowresistance state and high-resistance state, which requires a proper engineering of device materials and electrodes. This paper presents an RRAM device technology based on silicon oxide (SiO x ), showing high resistance window thanks to the high bandgap in the silicon oxide. Endurance, retention, and variability show excellent performance, thus supporting SiO x as a strong active material for developing future generation RRAMs.Index Terms-Cross point array, memory reliability, nonvolatile memory technology, resistive switching memory (RRAM), silicon oxide, storage class memory (SCM).

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“…Figure 6A shows of HfAlO x thin films, indicating its amorphous thermal stability, were recently reported. 33 The enhancement of LRS in our HfAlO x -based device arises from "moderate" DG Gibbs free energy oxide formation of HfAlO x thin films, which influence scavenging effect at Ti/HfAlO x interface, i.e. shrinkage of filament shape with increasing amount of Al 2 O 3 dopant.…”

Section: Resultsmentioning

confidence: 89%

“…On the other hand, no such of HRS degradation was observed for HfO 2 -based device. 33 The enhancement of LRS in our HfAlO x -based device arises from "moderate" DG Gibbs free energy oxide formation of HfAlO x thin films, which influence scavenging effect at Ti/HfAlO x interface, i.e. To avoid these problems, stacking Al 2 O 3 and HfO 2 thin films to form nanolaminated HfAlO x thin films benefits towards the better switching behavior in terms of reliable, uniform and low current RS process.…”

Section: Resultsmentioning

confidence: 97%

Comparative study of Al₂O₃, HfO₂, and HfAlO_x for improved self‐compliance bipolar resistive switching

et al. 2017

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The comparison of resistive switching (RS) storage in the same device architecture is explored for atomic layer deposition (ALD) Al2O3, HfO2 and HfAlOx‐based resistive random access memory (ReRAM) devices. Among them, the deeper high‐ and low‐ resistance states, more uniform VSET‐VRES, persistent ROFF/RON (>102) ratio and endurance up to 105 cycles during both DC and AC measurements were observed for HfAlOx‐based device. This improved behavior is attributed to the intermixing of amorphous Al2O3/HfO2 oxide layers to form amorphous thermally stable HfAlOx thin films by consecutive‐cycled ALD. In addition, the higher oxygen content at Ti/HfAlOx thin films interface was found within the energy dispersive spectroscopy analysis (EDS). We believe this higher oxygen content at the interface could lead to its sufficient storage and supply, leading to the stable filament reduction‐oxidation operation. Further given insight to the RS mechanism, SET/RESET power necessities and scavenging effect shed a light to the enhancement of HfAlOx‐based ReRAM device as well.

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On the Origin of Low-Resistance State Retention Failure in HfO₂-Based RRAM and Impact of Doping/Alloying

Cited by 81 publications

References 21 publications

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices

Comparative study of Al₂O₃, HfO₂, and HfAlO_x for improved self‐compliance bipolar resistive switching

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On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying

Cited by 81 publications

References 21 publications

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices

Comparative study of Al2O3, HfO2, and HfAlOx for improved self‐compliance bipolar resistive switching

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On the Origin of Low-Resistance State Retention Failure in HfO₂-Based RRAM and Impact of Doping/Alloying

Comparative study of Al₂O₃, HfO₂, and HfAlO_x for improved self‐compliance bipolar resistive switching