On the origin of epitaxial rhombohedral-B4C growth by CVD on 4H-SiC
Sachin Sharma,
Laurent Souqui,
Justinas Palisaitis
et al.
Abstract:Rhombohedral boron carbide, often referred to as r-B4C, is a potential material for applications in optoelectronic and thermoelectric devices. From fundamental thin film growth and characterization, we investigate the film-substrate interface between the r-B4C films grown on 4H-SiC (0001 ̅) (C-face) and 4H-SiC (0001) (Si-face) during chemical vapor deposition (CVD) to find the origin for epitaxial growth solely observed on the C-face. We used high-resolution (scanning) transmission electron microscopy and elec… Show more
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