2014
DOI: 10.1073/pnas.1315485111
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On the origin of enhanced sensitivity in nanoscale FET-based biosensors

Abstract: Electrostatic counter ion screening is a phenomenon that is detrimental to the sensitivity of charge detection in electrolytic environments, such as in field-effect transistor-based biosensors. Using simple analytical arguments, we show that electrostatic screening is weaker in the vicinity of concave curved surfaces, and stronger in the vicinity of convex surfaces. We use this insight to show, using numerical simulations, that the enhanced sensitivity observed in nanoscale biosensors is due to binding of biom… Show more

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Cited by 128 publications
(117 citation statements)
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“…The commonly stated argument that increased surface area-to-volume ratio increases the normalised change in current 28,36,143,144 is the rationalisation for much of the focus in publications on creating devices with nanoscale dimensions. This argument is still subject to debate, with some authors suggesting that nanoscale dimensions offer increased response via a different mechanism 125,145 or that the argument is not generally applicable to all structures. 145 Operating in the linear region, the SNR was calculated and measured to increase with the square root of the device area for constant device thickness.…”
Section: -142mentioning
confidence: 99%
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“…The commonly stated argument that increased surface area-to-volume ratio increases the normalised change in current 28,36,143,144 is the rationalisation for much of the focus in publications on creating devices with nanoscale dimensions. This argument is still subject to debate, with some authors suggesting that nanoscale dimensions offer increased response via a different mechanism 125,145 or that the argument is not generally applicable to all structures. 145 Operating in the linear region, the SNR was calculated and measured to increase with the square root of the device area for constant device thickness.…”
Section: -142mentioning
confidence: 99%
“…The change in current can be instead normalised by I low instead of I 0 , resulting in the 'unbounded' normalised change in current (I norm and Chui hypothesised that no such limit for biomolecule binding exists because the high affinity of biomolecularligand binding would result in the extent of binding being independent of the surface potential, in contrast to protonbinding where the binding is exponentially related to the potential of the surface. 124,125 The largest shift in threshold voltage for a pH sensor can be calculated based on the Nernstian response of 59 mV per pH. The steepest subthreshold slope for a classical transistor is approximately 59 mV dec −1 .…”
mentioning
confidence: 99%
“…where C dl is the diffusion layer capacitance resulting from the double layer created by the medium counterions accumulated at the interface between oxide layer, i.e., SiO 2 layer, and the electrolyte medium; C ox is the capacitance of the oxide layer; and C nw is the SiNW capacitance, which is again a double layer capacitance caused by the accumulation of carriers to the SiO 2 /SiNW interface [12], [13]. For a nanowire-on-insulator (NWoI) configuration of RX, we can consider the SiNW as a hemicylinder with an oxide layer of thickness t ox covering the surface, and a diffusion layer of thickness λ D covering the oxide layer [13].…”
Section: System Modelmentioning
confidence: 99%
“…For a nanowire-on-insulator (NWoI) configuration of RX, we can consider the SiNW as a hemicylinder with an oxide layer of thickness t ox covering the surface, and a diffusion layer of thickness λ D covering the oxide layer [13]. Accordingly, the diffusion layer capacitance can be given by…”
Section: System Modelmentioning
confidence: 99%
“…This result indicates that the charges introduced by TNF-a molecules electrostatically affect the free carrier concentration in the MoS 2 channel and induce a shift of the threshold voltage (i.e., DV T measured at the back gate), but these charges do not cause a noticeable change of the ON-state transconductance (g m ÂŒ @I DS @V G ) (or the field-effect mobility) of the FET. For such insulating-layercoated sensors, the response behavior can be well described by the conventional capacitor model, 14 and a calibrated sensor response quantity (S) is expressed in Eq. (1), 15,16 where I DS(nÂŒ0) is the I DS measured from an as-functionalized sensor (i.e., n ÂŒ 0) biased under a set of fixed V DS and V G , and FIG.…”
mentioning
confidence: 99%