On the origin of dislocation loops in irradiated materials: A point of view from silicon

Claverie, A.; Cherkashin, Nikolay

doi:10.1016/j.nimb.2015.09.011

Cited by 1 publication

(1 citation statement)

References 19 publications

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“…The accumulation and interaction of radiation-induced point defects lead to the formation of extended defects through an Ostwald ripening mechanism, which is driven by the reduction of defect formation energies [1]. In the particular case of crystalline Si (c-Si), Si interstitial extended defects are frequently formed after dopant implantation and thermal annealing processes used for the fabrication of junctions in electronic devices [2][3][4][5][6][7][8]. Extended defects can degrade the device performance by increasing leakage currents.…”

Section: Introductionmentioning

confidence: 99%

Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation

Santos

Ruiz

Aboy

et al. 2018

Journal of Elec Materi

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We used atomistic simulation tools to correlate experimental transmission electron microscopy images of extended defects in crystalline silicon with their structures at atomic level. Reliable atomic configurations of extended defects were generated using classical molecular dynamics simulations. High-resolution transmission electron microscopy (HRTEM) simulated images of obtained defects were compared to experimental images reported in the literature. We validated the developed procedure with the configurations proposed in the literature for {113} and {111} rod-like defects. We also proposed from our procedure configurations for {111} and {001} dislocation loops with simulated HRTEM images in excellent agreement with experimental images.

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