On the origin of blue luminescence arising from atmospheric impregnation of oxidized porous silicon

Canham, Leigh; Loni, A.; Calcott, P. D. J.; Simons, Andrew J.; Reeves, Christopher L.; Houlton, M. R.; Newey, J.; Nash, K. J.; Cox, T. I.

doi:10.1016/0040-6090(95)08072-4

Cited by 96 publications

(68 citation statements)

References 28 publications

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“…Some researchers suggest that C-related defects are responsible for the blue PL characteristics [2,6] Others alternatively claim that the presence of OH groups adsorbed on the surface of porous silicon are associated with this type of output [7]. Although the physical origin of the blue PL band in porous Si has not been unambiguously clarified yet, it is quite likely that C-and/or OH-related surface defects play crucial role, either directly or indirectly, in exhibiting the blue PL band.…”

Section: Introductionmentioning

confidence: 99%

“…Blue photoluminescence (PL), which is characterized by single-exponential [1] or multi-exponential decay [2] on the order of nanoseconds, has been reported from a variety of porous silicon such as aged, chemically oxidized and thermally oxidized samples [3] Although there still exists an argument that the blue PL is explained by a quantum confined mechanism [4], the weight of evidence is in favor of a defect-related model [3,5]. Some researchers suggest that C-related defects are responsible for the blue PL characteristics [2,6] Others alternatively claim that the presence of OH groups adsorbed on the surface of porous silicon are associated with this type of output [7].…”

Section: Introductionmentioning

confidence: 99%

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Visible luminescence from octadecylsilane monolayers on silica surfaces: Time-resolved photoluminescence characterization

Sagawa

Uchino

2005

Applied Physics Letters

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We have found that the adsorption of octadecyltrichlorosilane (OTS) monolayers on nanometer-sized silica particles yields a stable blue photoluminescence (PL) with a time scale of nanoseconds. The observed PL intensity increases after curing at temperatures from ∼100 to ∼300 °C, suggesting that condensations between adjacent OTS molecules on the silica surface are related to the PL. The PL decay curve of the cured samples remains unchanged from 77 to 450 K, whereas the time-integrated PL intensity shows a monotonous decrease with increasing temperature. From these experimental results, a model of radiative and nonradiative process associated with the PL is presented.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Visible luminescence from octadecylsilane monolayers on silica surfaces: Time-resolved photoluminescence characterization

Sagawa

Uchino

2005

Applied Physics Letters

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“…The F band luminescence, usually centered between 420 and 500 nm, decays on the nanosecond time scale. This can be observed on porous silicon samples aged in air or intentionally oxidized, and is thought to originate from structural defects in the silicon nanocrystal oxide shell, or from the luminescence of very small silicon nanocrystals [19,39,[69][70][71][72]. Other PL bands have been previously reported for porous silicon: the so-called UV band (centered around 350 nm), and the R band (ranging from 1100-1500 nm) [59].…”

Section: Optical Characterizationmentioning

confidence: 99%

Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

Pleština¹,

Đerek²,

Francaviglia³

et al. 2017

J. Phys. D: Appl. Phys.

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“…23,41,45 Changes in the PL of nanocrystalline Si over time, presumably alongside alterations in the surface chemistry or size of the particles, have been reported consistently across the literature. 23,30,46 However, the promise of robust, inorganic fluorophores with size-dependent optical properties continues to motivate researchers to develop strategies to mitigate the changing PL energy and intensity. bandgap to occur, they must be coupled with phonons (i.e., lattice vibrations), which have enough momentum to elicit the transition.…”

Section: Technological Developments Leading To Photoluminescent Siliconmentioning

confidence: 99%

“…40,[43][44][45][46][47][48][49][50][51][52][53] For example, surface reconstructions, chemical impurities, lattice vacancies, dislocations, etc., can produce characteristic energy states (defect states)…”

Section: Effect Of Defects On Photoluminescence From Silicon Nanopartmentioning

confidence: 99%

Investigation into Effects of Instability and Reactivity of Hydride-Passivated Silicon Nanoparticles on Interband Photoluminescence

Radlinger¹

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While silicon has long been utilized for its electronic properties, its use as an optical material has largely been limited due to the poor efficiency of interband transitions. However, discovery of visible photoluminescence (PL) from nanocrystalline silicon in 1990 triggered many ensuing research efforts to optimize PL from nanocrystalline silicon for optical applications. Currently, use of photoluminescent silicon nanoparticles (Si NPs) is commercially limited by: 1) the instability of the energy and intensity of the PL, and 2) the low quantum yield of interband PL from Si NPs.Herein, red-emitting, hydrogen-passivated silicon nanoparticles (H-Si NPs) were synthesized by thermally-induced disproportionation of a HSiCl 3 -derived (HSiO 1.5 )n polymer. The H-Si NPs produced by this method were then subjected to various chemical and physical environments to assess the long-term stability of the optical properties as a function of changing surface composition. This dissertation is intended to elucidate correlations between the reported PL instability and the observed changes in the Si NP surface chemistry over time and as a function of environment.First, the stability of the H-Si NP surface at slightly elevated temperatures towards reactivity with a simple alkane was probed. The H-Si NPs were observed by FT-IR spectroscopy to undergo partial hydrosilylation upon heating in refluxing hexane, in addition to varying degrees of surface oxidation. The unexpected reactivity of the Si surface in n-hexane supports the unstable nature of the H-Si NP surface, and furthermore implicates the presence of highly-reactive Si radicals on the surfaces of the Si NPs. We propose that reaction of alkene impurities with the Si surface radicals is largely responsible for the observed surface alkylation. However, we also present an alternate ii mechanism by which Si surface radicals could react with alkanes to result in alkylation of the surface.Next, the energy and intensity stability of the interband PL from H-Si NPs in the presence of a radical trap was probed. Upon addition of (2,2,6,6,-tetramethyl-piperidin-1-yl)oxyl (TEMPO), the energy and intensity of the interband transition was observed to change over time, dependent on the reaction conditions. First, when the reaction occurred at 4ºC with minimal light exposure, the interband transition exhibited a gradual hypsochromic shift to between 595 nm and 655 nm, versus the λ max of the original low energy emission peak at 700 nm, depending on the amount of TEMPO in the sample.Second, when the reaction proceeded at room temperature with frequent exposure to 360 nm irradiation, the original interband transition at 660 nm was quenched while a new peak at 575 nm developed. Based on all the data collected and analyzed, we assign the 595 -655 nm transition as due to interband exciton recombination from Si NPs with reduced diameters relative to the original Si NPs. We furthermore assign the 575 nm transition as due to an oxide-related defect state resulting from rapid oxidation of pho...

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On the origin of blue luminescence arising from atmospheric impregnation of oxidized porous silicon

Cited by 96 publications

References 28 publications

Visible luminescence from octadecylsilane monolayers on silica surfaces: Time-resolved photoluminescence characterization

Visible luminescence from octadecylsilane monolayers on silica surfaces: Time-resolved photoluminescence characterization

Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

Investigation into Effects of Instability and Reactivity of Hydride-Passivated Silicon Nanoparticles on Interband Photoluminescence

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