On the organic memristive device resistive switching efficacy

Memristive circuit-based model of central pattern generator to reproduce spinal neuronal activity in walking pattern

“…Then the polyethylene oxide (Mw = 600 kDa) electrolyte water solution was drop-casted onto the film. Silver wire (with a diameter of 50 µm) was placed in the solution and the device was exposed to drying in an airflow for 2 h. We have also proved the device is capable of changing resistance under signals of frequencies used in this work (Gerasimov et al, 2021). Memristive device sharply decreases the resistance when voltage above a certain threshold is applied and increases when the external voltage falls behind another threshold.…”

“…The mechanism of resistance switching is connected to the redox reactions in the PANI channel, oxidized form PANI is highly conductive, while the reduced one is insulating (Berzina et al, 2009). The device parameters (device scheme, switching kinetics, endurance, operation in STDP, and high-frequency regimes) could be found elsewhere (Lapkin et al, 2018;Prudnikov et al, 2020;Gerasimov et al, 2021). The devices were fabricated according to the previously reported procedure (Prudnikov et al, 2020).…”

AI Acceleration Enabled by Nanoelectronic Memristive Devices

“…Memristors are devices that have the ability to reversibly change their conductance under the action of an electric charge flowing through them [8]. This behavior caused by the resistive switching effect [9 [10,11] and inorganic [12,13] materials and structures based on them, from which memristive devices are made. Currently, memristors with a metal-oxide-metal structure are of the greatest interest, since they are most compatible with CMOS technology and can be integrated with other electronic components on a single chip in a single technological process.…”