On the non-linear properties of TlInX2 (X = S, Se, Te) ternary compounds

Hanias, M. P.; Anagnostopoulos, A. N.; Kambas, K.; Spyridelis, J.

doi:10.1016/0921-4526(89)90050-1

Cited by 112 publications

(88 citation statements)

References 22 publications

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“…Moreover, it has been found in Ref. [21] that the difference between the direct and indirect bandgap energies is equal to 0.15 eV at the room temperature, which agrees well with our results. Temperature dependences of the direct and indirect bandgap energies for the TlGaSe 2 :Zn crystals are presented in Fig.…”

Section: +supporting

confidence: 82%

“…1. The analysis of the experimental data yields the absorption coefficients varying from 20 to 800 cm -1 in the region of 100-300 K. If compared with TlGaSe 2 , the spectra are shifted towards the lower-energy region [21]. Note that the shape of the absorption edge is complex enough.…”

Section: Resultsmentioning

confidence: 99%

“…(1), T = I/I 0 is the transmission coefficient, R the reflection coefficient (R = 0.2605) [21],  the absorption coefficient (measured in cm -1 ), and d the sample thickness. Note that, for all the temperatures under study, we used the R values known for the room temperature, since the R coefficient changes only slightly from 10 to 320 K [21]. To eliminate multiple light reflections and the corresponding interference fringes, the samples were inclined at a small angle with respect to the normal to the incident beam.…”

Section: Methodsmentioning

confidence: 99%

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Study of optical absorption in TlGaSe2:Zn2+ single crystals

Makhnovets¹,

Myronchuk²,

Піскач³

et al. 2018

Ukr. J. Phys. Opt.

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Abstract. We report the results of experimental studies for the optical absorption in TlGaSe 2 :Zn 2+ single crystals grown using a modified Bridgman-Stockbarger technique. The absorption measurements at different temperatures are performed with the steps 50 K. The analysis of the experimental data yield in the absorption coefficients of TlGaSe 2 :Zn varying from 20 to 800 cm -1 in the temperature region 100-300 K. Direct and indirect bandgap values for TlGaSe 2 :Zn 2+ are calculated as functions of temperature. These values are respectively equal to 2.22 and 2.04 eV at 100 K. It is revealed that the spectral dependences of the absorption coefficient in the region 60-130 cm -1 follow the Urbach rule, whereas the corresponding steepness parameter and the Urbach energy increase with increasing temperature.

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Section: +supporting

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Study of optical absorption in TlGaSe2:Zn2+ single crystals

Makhnovets¹,

Myronchuk²,

Піскач³

et al. 2018

Ukr. J. Phys. Opt.

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“…Optical properties of TlInS 2 were also studied in Refs. [8,15,16]. It was revealed that TlInS 2 crystals have two energy gaps, consisting of a direct and an indirect one, which were found to be equal to 2.28 and 2.23 eV at 300 K, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…For possible applications as an optoelectronic device in the visible range, a great deal of attention has been devoted to the study of the structural [1,[4][5][6][7], electrical [8][9][10], and optical [8,[11][12][13][14] properties. These properties of semiconductors differ due to individual characteristics of energy gaps and impurities.…”

Section: Introductionmentioning

confidence: 99%

Deep Traps Distribution in TlInS₂Layered Crystals

2009

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The trap centers and distributions in TlInS 2 were studied in the temperature range of 100-300 K by using thermally stimulated currents technique. Experimental evidence was found for the presence of three trapping centers with activation energies 400, 570, and 650 meV. Their capture cross-sections were determined as 6.3 × 10 −16 , 2.7 × 10 −12 , and 1.8 × 10 −11 cm 2 , respectively. It was concluded that in these centers retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of hole traps was revealed from the analysis of the thermally stimulated current data obtained at different light excitation temperatures. This experimental technique provided a value of 800 meV/decade for the trap distribution.

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