On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the <i>E</i>1 and <i>E</i>1 + Δ1 optical transitions

Gluba, Lukasz; Yastrubchak, O.; Sęk, G.; Rudno‐Rudziński, W.; Sadowski, J.; Kulik, M.; Rzodkiewicz, W.; Rawski, Michał; Andrearczyk, T.; Misiewicz, J.; Wosiński, T.; Żuk, J.

doi:10.1063/1.4891329

Cited by 8 publications

(2 citation statements)

References 31 publications

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“…Optical properties of the layers were measured by spectroscopic ellipsometry (SE) 31,32 and modulation photoreflectance spectroscopy (PRS) 33 . SE probes the near-surface region, depending on the penetration depth of the applied polarized light.…”

Section: Sample Preparation and Experimental Methodsmentioning

confidence: 99%

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Yastrubchak,

Tataryn,

Gluba

et al. 2023

Sci Rep

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The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural perfection have been grown using low-temperature molecular-beam epitaxy. Post-growth annealing of the samples improves their structural and magnetic properties and increases the hole concentration in the layers. Hard X-ray angle-resolved photoemission spectroscopy reveals a strongly dispersing band in the Mn-doped layers, which crosses the Fermi energy and is caused by the high concentration of Mn-induced itinerant holes located in the valence band. An increased density of states near the Fermi level is attributed to additional localized Mn states. In addition to a decrease in the chemical potential with increasing Mn doping, we find significant changes in the valence band caused by the incorporation of a small atomic fraction of Bi atoms. The spin–orbit split-off band is shifted to higher binding energies, which is inconsistent with the impurity band model of the band structure in (Ga,Mn)As. Spectroscopic ellipsometry and modulation photoreflectance spectroscopy results confirm the valence band modifications in the investigated layers.

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Section: Sample Preparation and Experimental Methodsmentioning

confidence: 99%

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Yastrubchak,

Tataryn,

Gluba

et al. 2023

Sci Rep

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“…5a have been fitted using Aspnes's third derivative lineshapes (TDLS). 54,55 The deconvolution procedure has been performed using the lowest amount of TDLS features (max. 3) that maximizes the coefficient of determination r 2 (deconvolution shown in Supplementary Information, Fig.…”

Section: Figurementioning

confidence: 99%

Band structure evolution and the origin of magnetism in (Ga,Mn)As: From paramagnetic through superparamagnetic to ferromagnetic phase

et al. 2018

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The high-spectral-resolution spectroscopic studies of the energy gap evolution, supplemented with electronic, magnetic and structural characterization, show that the modification of the GaAs valence band caused by Mn incorporation occurs already for a very low Mn content, much lower than that required to support ferromagnetic spin -spin coupling in (Ga,Mn)As. Only for n-type (Ga,Mn)As with the Mn content below about 0.3% the Mnrelated extended states are visible as a feature detached from the valence-band edge and partly occupied with electrons. The combined magnetic and low-temperature photoreflectance studies presented here indicate that the paramagnetic -ferromagnetic transformation in p-type (Ga,Mn)As takes place without imposing changes of the unitary character of the valence band with the Fermi level located therein. The whole process is rooted in the nanoscale fluctuations of the local (hole) density of states and the formation of a superparamagnetic-like state. The Fermi level in (Ga,Mn)As is coarsened by the carrier concentration of the itinerant valence band holes and further fine-tuned by the many-body interactions.

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Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

Yastrubchak

Sadowski

Gluba

et al. 2014

Applied Physics Letters

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Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.

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On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E1 and E1 + Δ1 optical transitions

Cited by 8 publications

References 31 publications

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Band structure evolution and the origin of magnetism in (Ga,Mn)As: From paramagnetic through superparamagnetic to ferromagnetic phase

Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

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