On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

Yakimov, E. B.; Polyakov, A. Y.; Shchemerov, Ivan; Smirnov, N. B.; Vasilev, A. A.; Kochkova, А. I.; Вергелес, П. С.; Черных, А. В.; Xian, Minghan; Ren, F.; Pearton, S. J.

doi:10.1016/j.jallcom.2021.160394

Journal of Alloys and Compounds

2021

DOI: 10.1016/j.jallcom.2021.160394

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On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

E. B. Yakimov

A. Y. Polyakov

Ivan Shchemerov

et al.

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Cited by 26 publications

(29 citation statements)

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“…6,8 Therefore, we propose that Sn-alloying introduces deep-level defects rather than irradiation with fast reactor neutrons, 20 MeV protons, or treatment in high ion density Ar-plasma. 9 This is also consistent with prior reports that confirm the expected correlation between incorporated donor concentrations and native sources of compensation like V Ga deep acceptors that can readily trap holes. 21,23,24,27,28 To further investigate the deep-level defects, we performed CL spectroscopy and HSI.…”

supporting

confidence: 92%

“…[4][5][6] It has been a challenge to identify the source of high gains in Ga 2 O 3 -based photodetectors, and recent reports demonstrated its correlation with deep-level defects. [6][7][8][9] The fast progress of widebandgap metal-oxide relies on the success in understanding and controlling their defects. 10,11 Cathodoluminescence (CL) Hyperspectral imaging (HSI) becoming an invaluable tool for defect metrology because of its ability to map intensity variations or shifts in the emission wavelength.…”

mentioning

confidence: 99%

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Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Mukhopadhyay

Hatipoglu

Frodason

et al. 2022

Applied Physics Letters

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We report ultra-high responsivity of epitaxial (Sn x Ga 1−x ) 2 O 3 (TGO) Schottky UV-C photodetectors and experimentally identified the source of gain as deep-level defects, supported by first principle calculations. Epitaxial TGO films were grown by plasma-assisted molecular beam epitaxy (PAMBE) on (-201) oriented n-type β -Ga 2 O 3 substrates. Fabricated vertical Schottky devices exhibited peak responsivities as high as 3.5×10 4 A/W at -5 V applied bias under 250 nm illumination with sharp cut-off shorter than 280 nm and fast rise/fall time in milliseconds order. Hyperspectral imaging (HSI) cathodoluminescence (CL) spectra were examined to find the mid-bandgap defects, the source of this high gain. Irrespective of different tin mole fractions the TGO epilayer exhibited extra CL peaks at the green band (∼2.20 eV) not seen in β -Ga 2 O 3 along with enhancement of the blue emission-band (∼2.64 eV) and suppression of the UV emissionband. Based on hybrid functional calculations of the optical emission expected for defects involving Sn in β -Ga 2 O 3 , V Ga -Sn complexes are proposed as potential defect origins of the observed green and blue emission-bands. Such complexes behave as acceptors that can efficiently trap photogenerated holes and are predicted to be predominantly responsible for the ultra-high photoconductive gain in the Sn-alloyed Ga 2 O 3 devices by means of thermionic emission and electron tunneling. Regenerating the V Ga -Sn defect complexes by optimizing the growth techniques, we have demonstrated a planar Schottky UV-C photodetector of the highest peak responsivity.

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supporting

confidence: 92%

mentioning

confidence: 99%

Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Mukhopadhyay

Hatipoglu

Frodason

et al. 2022

Applied Physics Letters

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“…Inspired from the previous studies on Schottky barrier lowering in photodetectors made of Ga2O3 22,43 , we propose a model (see Fig. 8) for the high gain observed in TGO photodetectors.…”

mentioning

confidence: 91%

“…Furthermore, STH may not be a prominent effect at room temperature as STH were shown to be thermally unstable above 90 K 21 . It is possible that deep intra-band acceptor states, especially gallium vacancies (VGa) and their complexes may serve as trapping sites for holes 22 . Alloying can be used for introducing deep acceptors in the material system as well as increasing the UV-C coverage and improving the bandwidth of the resulting photodetector.…”

mentioning

confidence: 99%

“…Thus, we attribute the ultra-high gain observed in our devices to hole trapping at two possible complexes, namely hydrogenated gallium vacancies or Sn-VGa complexes. Recently, Yakimov et al 43 have shown a photodetector with increased photocurrent via Schottky barrier lowering by introducing deep acceptors by neutron and proton irradiation, and argon plasma treatments. We adopt an alternative approach by alloying Ga2O3 with Sn and thereby introducing deep level acceptors and increasing the deep level trap states which can serve as hole trapping centers as illustrated in Figure 8.…”

mentioning

confidence: 99%

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Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectors

Hatipoglu

Hunter

Mukhopadhyay

et al. 2021

Journal of Applied Physics

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Heterogeneous integration of β-(SnxGa1-x)2O3 (TGO) UV-C photodetectors on silicon substrates by molecular beam epitaxy is demonstrated. Multimodal electron microscopy and spectroscopy techniques reveal a direct correlation between structural, compositional and optical properties of the TGO and the functional properties of the photodetectors. Wavelength dispersive X-ray spectroscopy results accurately determine the Sn concentrations (x) in the region of 0.020, and room temperature cathodoluminescence (CL) hyperspectral imaging shows changes in CL emission intensity in the TGO compared with a Ga2O3 sample with no Sn. Alloying Ga2O3 with Sn is shown to quench the red emission and enhance the blue emission. The increase in blue emission corresponds to the rise in VGa-related deep acceptors responsible for the high gain observed in the TGO detectors. A Ga2O3 nucleation layer is shown to improve the TGO surface quality and give better device properties compared to TGO grown directly onto the Si substrate, including a higher specific detectivity on the order of 10 12 Jones. Introduction:The UV spectrum covers a wide range of wavelengths spanning 10-400 nm. The earth's atmosphere and ozone absorb UV-C (100-280 nm), removing radiation with wavelengths shorter than 280 nm from the solar spectrum that reaches its surface. Therefore, a detector designed to be sensitive to only these wavelengths is not affected by solar radiation and is said #

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Role of interfacial layer as PANI–silicene in Si-based photodiodes

Kocyigit,

Yıldız,

Taşaltın

et al. 2024

J Mater Sci

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Silicene is a 2D monoatomic sheet of silicon and can be used for various applications such as degradation, therapy, and biosafety. Polyaniline (PANI) is a conducting polymer employed for electronic devices. In this study, we synthesized PANI–silicene composites and operated as an external interfacial layer between Al and different type substrates of p-Si and n-Si to compare Schottky-type photodiodes of PANI–silicene/n-Si and PANI–silicene/p-Si. The silicene structures were investigated using X-ray diffractometry (XRD) and scanning electron microscopy (SEM) techniques. Also, the light power intensity dependent of PANI–silicene/n-Si and PANI–silicene/p-Si photodiodes carried out in the range 0–100 mW/cm2 and I–t measurements utilized to determine the response time of the photodiodes. Basic parameters of devices such as ideality factors barrier, height, and series resistance were obtained by Norde and Cheung methods and thermionic emission (TE) theory from I–V graphs. While the PANI–silicene/n-Si exhibited high ideality factor values of 5.49, the PANI–silicene/p-Si photodiodes showed a low ideality factor of 1.48. The photodiode parameters such as detectivity and responsivity were calculated as 6.40 × 109 Jones and 38.9 mA/W for n-Si substrate and 78.2 mA/W and 8.81 × 109 Jones for p-Si substrate. The case of basic electrical properties for PANI–silicene composite interlayer-based photodiodes was analyzed in detail.

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On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

Cited by 26 publications

References 27 publications

Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectors

Role of interfacial layer as PANI–silicene in Si-based photodiodes

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