2016
DOI: 10.4236/jemaa.2016.82003
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On the Model of Spectral Analysis of Optical Radiation

Abstract: A silicon photodiode structure was studied for the spectral analysis of optical radiation. The structure consists of oppositely-directed barriers. We developed a model of the electronic processes occurring in the structure. The possibilities of the selection of separate waves from the integral flux of radiation, the wave absorption and the quantitative spectral analysis of the waves of the model for contaminated environment were investigated. An algorithm was developed for carrying out the spectral analysis wi… Show more

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Cited by 1 publication
(2 citation statements)
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“…A new technology was developed theoretically in National Polytechnic University of Armenia where a single diode is used as a spectrometer, and incident light spectra is reconstructed from Current-Voltage characteristic of the diode [4][5][6][7][8] . Such diode spectrometer is expected to have 200 -1200 nm measuring range and 1 nm resolution, the same as currently available USB spectrometers.…”
Section: Chania Greece 9 -12 October 2018mentioning
confidence: 99%
See 1 more Smart Citation
“…A new technology was developed theoretically in National Polytechnic University of Armenia where a single diode is used as a spectrometer, and incident light spectra is reconstructed from Current-Voltage characteristic of the diode [4][5][6][7][8] . Such diode spectrometer is expected to have 200 -1200 nm measuring range and 1 nm resolution, the same as currently available USB spectrometers.…”
Section: Chania Greece 9 -12 October 2018mentioning
confidence: 99%
“…The principle of a novel diode spectrometer is realized by silicon semiconductor structure with oppositely directed Schottky barrier and n-p junction, where n-region is the base 8 (Figure 1 a). The structure is irradiated by an external light source.…”
Section: Theoretical Modelmentioning
confidence: 99%